| 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, MA Najmi, K Ohkawa Applied Physics Letters 116 (16), 2020 | 146 | 2020 |
| Demonstration of low forward voltage InGaN-based red LEDs D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied Physics Express 13 (3), 031001, 2020 | 86 | 2020 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Advances 12 (6), 2022 | 46 | 2022 |
| 630-nm red InGaN micro-light-emitting diodes (<20 μm × 20 μm) exceeding 1 mW/mm2 for full-color micro-displays Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa Photonics Research 9 (9), 1796-1802, 2021 | 46 | 2021 |
| 606-nm InGaN amber micro-light-emitting diodes with an on-wafer external quantum efficiency of 0.56% Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa IEEE Electron Device Letters 42 (7), 1029-1032, 2021 | 46 | 2021 |
| Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes Z Zhuang, D Iida, P Kirilenko, M Velazquez-Rizo, K Ohkawa Optics Express 28 (8), 12311-12321, 2020 | 46 | 2020 |
| Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures K Ohkawa, Y Uetake, M Velazquez-Rizo, D Iida Nano Energy 59, 569-573, 2019 | 25 | 2019 |
| Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4 (0001) substrate M Velazquez-Rizo, MA Najmi, D Iida, P Kirilenko, K Ohkawa Applied Physics Express 15 (6), 065501, 2022 | 23 | 2022 |
| High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits D Iida, Z Zhuang, P Kirilenko, M Velazquez-Rizo, K Ohkawa Applied Physics Letters 117 (17), 2020 | 22 | 2020 |
| Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa Optics Letters 46 (20), 5092-5095, 2021 | 21 | 2021 |
| Investigation of a separated short-wavelength peak in InGaN red light-emitting diodes P Kirilenko, Z Zhuang, D Iida, M Velazquez-Rizo, K Ohkawa Crystals 11 (9), 1123, 2021 | 14 | 2021 |
| Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe2O3 as cocatalyst M Velazquez-Rizo, D Iida, K Ohkawa Scientific reports 10 (1), 12586, 2020 | 12 | 2020 |
| High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates P Kirilenko, MA Najmi, B Ma, A Shushanian, M Velazquez-Rizo, D Iida, ... AIP Advances 13 (4), 2023 | 8 | 2023 |
| Photoelectrochemical H2 generation from water using a CoOx/GaN photoelectrode M Velazquez-Rizo, D Iida, K Ohkawa Japanese Journal of Applied Physics 58 (SC), SCCC23, 2019 | 6 | 2019 |
| InGaN-based RGB micro-LED arrays K Ohkawa, Z Zhuang, D Iida, M Velazquez-Rizo Light-Emitting Devices, Materials, and Applications XXVI, PC1202202, 2022 | 4 | 2022 |
| Low-temperature direct electrochemical splitting of H2S M Velazquez-Rizo, AC Cavazos Sepulveda Frontiers in Chemical Engineering 4, 1087435, 2023 | 3 | 2023 |
| Passivation of Surface States in GaN by NiO Particles M Velazquez-Rizo, P Kirilenko, D Iida, Z Zhuang, K Ohkawa Crystals 12 (2), 211, 2022 | 2 | 2022 |
| Strain-compensated InGaN red LEDs grown by micro-flow-channel MOVPE K Ohkawa, M Velazquez-Rizo, M Najmi, D Iida Gallium Nitride Materials and Devices XIX, PC1288614, 2024 | | 2024 |
| Strain-compensated InGaN quantum-well red standard/micro-LEDs K Ohkawa, P Kirilenko, MA Najmi, M Velazquez-Rizo, Z Zhuang, D Iida Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2 editors-pick D Iida, P Kirilenko, M Velazquez-Rizo, Z Zhuang, MA Najmi, K Ohkawa AIP Publishing, 2022 | | 2022 |