Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers YK Kuo, JY Chang, MC Tsai, SH Yen
Applied physics letters 95 (1), 2009
302 2009 Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ...
Nano letters 18 (11), 6906-6914, 2018
187 2018 Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer YK Kuo, JY Chang, MC Tsai
Optics letters 35 (19), 3285-3287, 2010
179 2010 Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen
IEEE Journal of Quantum Electronics 46 (8), 1214-1220, 2010
131 2010 Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well CT Liao, MC Tsai, BT Liou, SH Yen, YK Kuo
Journal of Applied Physics 108 (6), 2010
88 2010 Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo
IEEE photonics technology letters 21 (14), 975-977, 2009
86 2009 Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer YK Kuo, MC Tsai, SH Yen
Optics Communications 282 (21), 4252-4255, 2009
85 2009 Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers YK Kuo, TH Wang, JY Chang, MC Tsai
Applied physics letters 99 (9), 2011
77 2011 Advantages of blue InGaN light-emitting diodes with AlGaN barriers JY Chang, MC Tsai, YK Kuo
Optics letters 35 (9), 1368-1370, 2010
75 2010 Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers MC Tsai, SH Yen, YK Kuo
Applied Physics Letters 98 (11), 2011
51 2011 Investigation of optical performance of InGaN MQW LED with thin last barrier SH Yen, ML Tsai, MC Tsai, SJ Chang, YK Kuo
IEEE Photonics Technology Letters 22 (24), 1787-1789, 2010
42 2010 Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses MC Tsai, SH Yen, YC Lu, YK Kuo
IEEE Photonics Technology Letters 23 (2), 76-78, 2010
41 2010 Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier YK Kuo, YH Shih, MC Tsai, JY Chang
IEEE Photonics Technology Letters 23 (21), 1630-1632, 2011
37 2011 Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes YK Kuo, SH Horng, SH Yen, MC Tsai, MF Huang
Applied Physics A 98, 509-515, 2010
32 2010 Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1115-1121, 2009
32 2009 Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes YK Kuo, YH Chen, JY Chang, MC Tsai
Applied Physics Letters 100 (4), 2012
31 2012 Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo
Applied Physics A 97, 705-708, 2009
22 2009 Low resistivity GaN-based polarization-induced tunnel junctions MC Tsai, B Leung, TC Hsu, YK Kuo
Journal of lightwave technology 31 (22), 3575-3581, 2013
20 2013 Carrier Transportation and Internal Quantum Efficiency of Blue InGaN Light-Emitting Diodes With MC Tsai, SH Yen, YK Kuo
IEEE Photonics Technology Letters 22 (6), 374-376, 2010
20 2010 Investigation of blue InGaN light-emitting diodes with step-like quantum well MC Tsai, SH Yen, YK Kuo
Applied Physics A 104, 621-626, 2011
16 2011 