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Felix Reichmann
Felix Reichmann
IHP - Leibniz Institute for High Performance Microelectronics
Подтвержден адрес электронной почты в домене ihp-microelectronics.com
Название
Процитировано
Процитировано
Год
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 2019
722019
Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device
C Corley-Wiciak, C Richter, MH Zoellner, I Zaitsev, CL Manganelli, ...
ACS applied materials & interfaces 15 (2), 3119-3130, 2023
352023
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition
Y Yamamoto, O Skibitzki, MA Schubert, M Scuderi, F Reichmann, ...
Japanese Journal of Applied Physics 59 (SG), SGGK10, 2020
172020
Lattice deformation at submicron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
C Corley-Wiciak, MH Zoellner, I Zaitsev, K Anand, E Zatterin, Y Yamamoto, ...
Physical Review Applied 20 (2), 024056, 2023
112023
Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa2O4(100) Single‐Crystals
F Reichmann, J Dabrowski, AP Becker, WM Klesse, K Irmscher, ...
physica status solidi (b) 259 (3), 2100452, 2022
42022
New insights into the electronic states of the Ge (0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
F Reichmann, E Scalise, AP Becker, EVS Hofmann, J Dabrowski, ...
Applied Surface Science 571, 151264, 2022
32022
MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates
A Hayat, D Spirito, AA Corley-Wiciak, MA Schubert, M Masood, ...
Materials Science in Semiconductor Processing 165, 107693, 2023
22023
Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device
V Brackmann, M Neul, M Friedrich, W Langheinrich, M Simon, P Muster, ...
38th European Mask and Lithography Conference (EMLC 2023) 12802, 150-167, 2023
12023
Germanium, Tin and (zinc) Gallium Oxide for Advanced Micro-and Optoelectronics: Insights Into the Surface Electronic Structure with Photoemission Techniques
F Reichmann
Brandenburgische Technische Universität Cottbus-Senftenberg, 2022
12022
Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature
EPB Quesada, A Mistroni, R Jia, KDS Reddy, F Reichmann, H Castan, ...
IEEE Electron Device Letters, 2024
2024
200 mm Wafer Level Characterization at 2 K of Si/SiGe Field-Effect Transistors
ND Komericki, P Muster, F Reichmann, T Huckemann, D Kaufmann, ...
ECS transactions 114 (2), 133, 2024
2024
Low Disorder and High Mobility 2DEG in Si/SiGe Fabricated in 200 mm BiCMOS Pilot line
A Mistroni, F Reichmann, Y Yamamoto, MH Zöllner, G Capellini, L Diebel, ...
ECS Transactions 114 (2), 123, 2024
2024
Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line
F Reichmann, A Mistroni, Y Yamamoto, P Kulse, S Marschmeyer, ...
ECS Transactions 114 (2), 109, 2024
2024
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications
LK Diebel, LG Zinkl, A Hötzinger, F Reichmann, M Lisker, Y Yamamoto, ...
arXiv preprint arXiv:2408.14844, 2024
2024
Germanium quantum wells as a novel material platform for spin qubits
N Focke, L Visser, F Reichmann, Y Yamamoto, V Mourik, A Mistroni, ...
87. Jahrestagung der DPG und DPG-Frühjahrstagung der Sektion Kondensierte …, 2024
2024
From an empty lab to customized setups and germanium quantum dots
L Visser, N Focke, Y Yamamoto, V Mourik, G Capellini, A Mistroni, ...
Spin Qubit 6, 2024
2024
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature
A Mistroni, R Jia, K Dorai Swamy Reddy, F Reichmann, C Wenger, ...
IEEE Electron Device Letters 45 (12), 2391-2394, 2024
2024
Modification of the Ge (0 0 1) subsurface electronic structure after adsorption of Sn
F Reichmann, AP Becker, EVS Hofmann, NJ Curson, WM Klesse, ...
Applied Surface Science 599, 153884, 2022
2022
Nanoscale Mapping of Strain Variations in Vicinity of Si/Sige Spin Qubit Devices By Scanning X-Ray Diffraction Microscopy
C Richter, C Corley-Wiciak, MH Zöllner, Y Yamamoto, K Anand, ...
242nd ECS Meeting (October 9-13, 2022), 2022
2022
Germanium, Zinn und (Zink-) Galliumoxid für fortschrittliche Mikro-und Optoelektronik: Einblicke in die elektronische Struktur der Oberfläche mit Photoemissionstechniken
F Reichmann
BTU Cottbus-Senftenberg, 2022
2022
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