The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019 | 72 | 2019 |
Nanoscale mapping of the 3D strain tensor in a germanium quantum well hosting a functional spin qubit device C Corley-Wiciak, C Richter, MH Zoellner, I Zaitsev, CL Manganelli, ... ACS applied materials & interfaces 15 (2), 3119-3130, 2023 | 35 | 2023 |
Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition Y Yamamoto, O Skibitzki, MA Schubert, M Scuderi, F Reichmann, ... Japanese Journal of Applied Physics 59 (SG), SGGK10, 2020 | 17 | 2020 |
Lattice deformation at submicron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices C Corley-Wiciak, MH Zoellner, I Zaitsev, K Anand, E Zatterin, Y Yamamoto, ... Physical Review Applied 20 (2), 024056, 2023 | 11 | 2023 |
Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa2O4(100) Single‐Crystals F Reichmann, J Dabrowski, AP Becker, WM Klesse, K Irmscher, ... physica status solidi (b) 259 (3), 2100452, 2022 | 4 | 2022 |
New insights into the electronic states of the Ge (0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation F Reichmann, E Scalise, AP Becker, EVS Hofmann, J Dabrowski, ... Applied Surface Science 571, 151264, 2022 | 3 | 2022 |
MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates A Hayat, D Spirito, AA Corley-Wiciak, MA Schubert, M Masood, ... Materials Science in Semiconductor Processing 165, 107693, 2023 | 2 | 2023 |
Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device V Brackmann, M Neul, M Friedrich, W Langheinrich, M Simon, P Muster, ... 38th European Mask and Lithography Conference (EMLC 2023) 12802, 150-167, 2023 | 1 | 2023 |
Germanium, Tin and (zinc) Gallium Oxide for Advanced Micro-and Optoelectronics: Insights Into the Surface Electronic Structure with Photoemission Techniques F Reichmann Brandenburgische Technische Universität Cottbus-Senftenberg, 2022 | 1 | 2022 |
Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature EPB Quesada, A Mistroni, R Jia, KDS Reddy, F Reichmann, H Castan, ... IEEE Electron Device Letters, 2024 | | 2024 |
200 mm Wafer Level Characterization at 2 K of Si/SiGe Field-Effect Transistors ND Komericki, P Muster, F Reichmann, T Huckemann, D Kaufmann, ... ECS transactions 114 (2), 133, 2024 | | 2024 |
Low Disorder and High Mobility 2DEG in Si/SiGe Fabricated in 200 mm BiCMOS Pilot line A Mistroni, F Reichmann, Y Yamamoto, MH Zöllner, G Capellini, L Diebel, ... ECS Transactions 114 (2), 123, 2024 | | 2024 |
Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line F Reichmann, A Mistroni, Y Yamamoto, P Kulse, S Marschmeyer, ... ECS Transactions 114 (2), 109, 2024 | | 2024 |
Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications LK Diebel, LG Zinkl, A Hötzinger, F Reichmann, M Lisker, Y Yamamoto, ... arXiv preprint arXiv:2408.14844, 2024 | | 2024 |
Germanium quantum wells as a novel material platform for spin qubits N Focke, L Visser, F Reichmann, Y Yamamoto, V Mourik, A Mistroni, ... 87. Jahrestagung der DPG und DPG-Frühjahrstagung der Sektion Kondensierte …, 2024 | | 2024 |
From an empty lab to customized setups and germanium quantum dots L Visser, N Focke, Y Yamamoto, V Mourik, G Capellini, A Mistroni, ... Spin Qubit 6, 2024 | | 2024 |
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature A Mistroni, R Jia, K Dorai Swamy Reddy, F Reichmann, C Wenger, ... IEEE Electron Device Letters 45 (12), 2391-2394, 2024 | | 2024 |
Modification of the Ge (0 0 1) subsurface electronic structure after adsorption of Sn F Reichmann, AP Becker, EVS Hofmann, NJ Curson, WM Klesse, ... Applied Surface Science 599, 153884, 2022 | | 2022 |
Nanoscale Mapping of Strain Variations in Vicinity of Si/Sige Spin Qubit Devices By Scanning X-Ray Diffraction Microscopy C Richter, C Corley-Wiciak, MH Zöllner, Y Yamamoto, K Anand, ... 242nd ECS Meeting (October 9-13, 2022), 2022 | | 2022 |
Germanium, Zinn und (Zink-) Galliumoxid für fortschrittliche Mikro-und Optoelektronik: Einblicke in die elektronische Struktur der Oberfläche mit Photoemissionstechniken F Reichmann BTU Cottbus-Senftenberg, 2022 | | 2022 |