| Lasing from glassy Ge quantum dots in crystalline Si M Grydlik, F Hackl, H Groiss, M Glaser, A Halilovic, T Fromherz, W Jantsch, ... ACS photonics 3 (2), 298-303, 2016 | 126 | 2016 |
| Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ... Physical Review B—Condensed Matter and Materials Physics 80 (20), 205321, 2009 | 115 | 2009 |
| Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates M Grydlik, G Langer, T Fromherz, F Schäffler, M Brehm Nanotechnology 24 (10), 105601, 2013 | 94 | 2013 |
| Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications M Brehm, M Grydlik Nanotechnology 28 (39), 392001, 2017 | 77 | 2017 |
| Enhanced telecom emission from single group-IV quantum dots by precise CMOS-compatible positioning in photonic crystal cavities M Schatzl, F Hackl, M Glaser, P Rauter, M Brehm, L Spindlberger, ... ACS photonics 4 (3), 665-673, 2017 | 70 | 2017 |
| Ultra-steep side facets in multi-faceted SiGe/Si (001) Stranski-Krastanow islands M Brehm, H Lichtenberger, T Fromherz, G Springholz Nanoscale research letters 6, 1-8, 2011 | 52 | 2011 |
| How pit facet inclination drives heteroepitaxial island positioning on patterned substrates G Vastola, M Grydlik, M Brehm, T Fromherz, G Bauer, F Boioli, L Miglio, ... Physical Review B—Condensed Matter and Materials Physics 84 (15), 155415, 2011 | 52 | 2011 |
| Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers J Zhang, M Brehm, M Grydlik, OG Schmidt Chemical Society Reviews 44 (1), 26-39, 2015 | 51 | 2015 |
| Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si M Grydlik, MT Lusk, F Hackl, A Polimeni, T Fromherz, W Jantsch, ... Nano letters 16 (11), 6802-6807, 2016 | 49 | 2016 |
| Room-temperature group-IV LED based on defect-enhanced Ge quantum dots P Rauter, L Spindlberger, F Schäffler, T Fromherz, J Freund, M Brehm ACS Photonics 5 (2), 431-438, 2018 | 48 | 2018 |
| The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer M Brehm, M Grydlik, H Groiss, F Hackl, F Schäffler, T Fromherz, G Bauer Journal of Applied Physics 109 (12), 2011 | 47 | 2011 |
| Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si (001) substrates F Hackl, M Grydlik, M Brehm, H Groiss, F Schäffler, T Fromherz, G Bauer Nanotechnology 22 (16), 165302, 2011 | 46 | 2011 |
| Combined structural and photoluminescence study of SiGe islands on Si substrates: comparison with realistic energy level calculations M Brehm, T Suzuki, T Fromherz, Z Zhong, N Hrauda, F Hackl, J Stangl, ... New Journal of Physics 11 (6), 063021, 2009 | 45 | 2009 |
| Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers H Groiss, M Glaser, M Schatzl, M Brehm, D Gerthsen, D Roth, P Bauer, ... Scientific reports 7 (1), 16114, 2017 | 44 | 2017 |
| UV nanoimprint lithography for the realization of large-area ordered SiGe/Si (001) island arrays E Lausecker, M Brehm, M Grydlik, F Hackl, I Bergmair, M Mühlberger, ... Applied Physics Letters 98 (14), 2011 | 43 | 2011 |
| Quantitative determination of Ge profiles across SiGe wetting layers on Si (001) M Brehm, M Grydlik, H Lichtenberger, T Fromherz, N Hrauda, W Jantsch, ... Applied Physics Letters 93 (12), 2008 | 42 | 2008 |
| Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio M Grydlik, M Brehm, F Hackl, H Groiss, T Fromherz, F Schäffler, G Bauer New Journal of Physics 12 (6), 063002, 2010 | 37 | 2010 |
| On-chip infrared photonics with Si-Ge-heterostructures: What is next? IA Fischer, M Brehm, M De Seta, G Isella, DJ Paul, M Virgilio, G Capellini APL Photonics 7 (5), 2022 | 34 | 2022 |
| Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts L Wind, M Sistani, R Böckle, J Smoliner, L Vukŭsić, J Aberl, M Brehm, ... Small 18 (44), 2204178, 2022 | 31 | 2022 |
| Excitation intensity driven PL shifts of SiGe islands on patterned and planar Si (001) substrates: evidence for Ge-rich dots in islands M Brehm, M Grydlik, F Hackl, E Lausecker, T Fromherz, G Bauer Nanoscale research letters 5, 1868-1872, 2010 | 31 | 2010 |
Friedrich SchäfflerJohannes Kepler University Linz (JKU), AustriaПодтвержден адрес электронной почты в домене jku.at