Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ...
Nature Electronics 4 (8), 595-603, 2021
212 2021 High Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 41 (1), 26-29, 2019
122 2019 p -GaN Gate HEMT With Surface Reinforcement for Enhanced Gate ReliabilityL Zhang, Z Zheng, S Yang, W Song, J He, KJ Chen
IEEE Electron Device Letters 42 (1), 22-25, 2020
85 2020 A 1.9-kV/2.61-m2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V T Zhang, J Zhang, H Zhou, T Chen, K Zhang, Z Hu, Z Bian, K Dang, ...
IEEE Electron Device Letters 39 (10), 1548-1551, 2018
69 2018 E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
67 2020 Planar GaN power integration–the world is flat KJ Chen, J Wei, G Tang, H Xu, Z Zheng, L Zhang, W Song
2020 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2020
62 2020 Monolithically integrated GaN ring oscillator based on high-performance complementary logic inverters Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 42 (1), 26-29, 2020
49 2020 High breakdown-voltage (> 2200 V) AlGaN-channel HEMTs with ohmic/Schottky hybrid drains W Zhang, J Zhang, M Xiao, L Zhang, Y Hao
IEEE Journal of the Electron Devices Society 6, 931-935, 2018
42 2018 An actively-passivated p-GaN gate HEMT with screening effect against surface traps Y Wu, J Wei, M Wang, M Nuo, J Yang, W Lin, Z Zheng, L Zhang, M Hua, ...
IEEE Electron Device Letters 44 (1), 25-28, 2022
40 2022 GaN power integration technology and its future prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ...
IEEE Transactions on Electron Devices, 2023
38 2023 E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability M Hua, J Chen, C Wang, L Liu, L Li, J Zhao, Z Jiang, J Wei, L Zhang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2020
37 2020 Enhancement-mode GaN p-channel MOSFETs for power integration Z Zheng, W Song, L Zhang, S Yang, H Xu, RKY Wong, J Wei, KJ Chen
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
33 2020 Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride J Chen, J Zhao, S Feng, L Zhang, Y Cheng, H Liao, Z Zheng, X Chen, ...
Advanced Materials 35 (12), 2208960, 2023
31 2023 Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures WH Zhang, JS Xue, L Zhang, T Zhang, ZY Lin, JC Zhang, Y Hao
Applied Physics Letters 110 (25), 252102, 2017
31 2017 L Zhang, J Wei, Z Zheng, W Song, S Yang, H Xu, KJ Chen
IEEE Electron Device Letters 41 (3), 341-344, 2020
30 2020 AlGaN-channel gate injection transistor on silicon substrate with adjustable 4–7-V threshold voltage and 1.3-kV breakdown voltage L Zhang, H Zhou, W Zhang, K Dang, T Zhang, P Ma, X Ma, J Zhang, ...
IEEE Electron Device Letters 39 (7), 1026-1029, 2018
30 2018 SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs L Zhang, Z Zheng, Y Cheng, YH Ng, S Feng, W Song, T Chen, KJ Chen
2021 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2021
28 2021 Threshold Voltage Instability of Enhancement-Mode GaN Buried p -Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ...
IEEE Electron Device Letters 42 (11), 1584-1587, 2021
24 2021 E-mode pn junction/AlGaN/GaN HEMTs with enhanced gate reliability C Wang, M Hua, S Yang, L Zhang, KJ Chen
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
24 2020 GaN HEMT with convergent channel for low intrinsic knee voltage Z Zheng, W Song, J Lei, Q Qian, J Wei, M Hua, S Yang, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (9), 1304-1307, 2020
23 2020 
Kevin J. ChenHong Kong University of Science and TechnologyПодтвержден адрес электронной почты в домене ust.hk
