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Fikadu Alema
Fikadu Alema
Agnitron Technology, Inc.
Подтвержден адрес электронной почты в домене agnitron.com - Главная страница
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Процитировано
Год
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck
APL Materials 7 (2), 2019
2762019
Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
F Alema, B Hertog, A Osinsky, P Mukhopadhyay, M Toporkov, ...
Journal of Crystal Growth 475, 77-82, 2017
1532017
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 2020
1342020
Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film
F Alema, B Hertog, O Ledyaev, D Volovik, G Thoma, R Miller, A Osinsky, ...
physica status solidi (a) 214 (5), 1600688, 2017
1292017
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck
APL Materials 7 (12), 2019
1032019
Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck
APL Materials 8 (2), 2020
902020
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ...
APL Materials 7 (2), 2019
852019
Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructures Growth for Power Electronics
AO Ross Miller, Fikadu Alelma
IEEE Transactions on Semiconductor Manufacturing 31 (4), 99, 2018
85*2018
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
A Bhattacharyya, P Ranga, S Roy, C Peterson, F Alema, G Seryogin, ...
IEEE Electron Device Letters 42 (9), 1272-1275, 2021
832021
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema, P Ranga, S Roy, C Peterson, ...
Applied Physics Express 15 (6), 061001, 2022
762022
Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck
Applied Physics Letters 118 (16), 2021
722021
Ge doping of β-Ga2O3 by MOCVD
F Alema, G Seryogin, A Osinsky, A Osinsky
APL Materials 9 (9), 2021
582021
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
452020
H2O vapor assisted growth of β-Ga2O3 by MOCVD
F Alema, Y Zhang, A Mauze, T Itoh, JS Speck, B Hertog, A Osinsky
AIP Advances 10 (8), 2020
422020
Tuning the responsivity of monoclinic solar-blind photodetectors grown by metal organic chemical vapor deposition
I Hatipoglu, P Mukhopadhyay, F Alema, TS Sakthivel, S Seal, A Osinsky, ...
Journal of Physics D: Applied Physics 53 (45), 454001, 2020
412020
High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition
F Alema, B Hertog, O Ledyaev, D Volovik, R Miller, A Osinsky, S Bakhshi, ...
Sensors and Actuators A: Physical 249, 263-268, 2016
402016
Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
F Alema, B Hertog, AV Osinsky, P Mukhopadhyay, M Toporkov, ...
Oxide-based Materials and Devices VIII 10105, 242-249, 2017
342017
Growth of high Mg content wurtzite MgZnO epitaxial films via pulsed metal organic chemical vapor deposition
F Alema, O Ledyaev, R Miller, V Beletsky, A Osinsky, WV Schoenfeld
Journal of Crystal Growth 435, 6-11, 2016
342016
Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3
Y Zhang, A Mauze, F Alema, A Osinsky, JS Speck
Applied Physics Express 12 (4), 044005, 2019
302019
β-(AlxGa1− x) 2O3/Ga2O3 heterostructure Schottky diodes for improved VBR2/RON
P P Sundaram, F Alema, A Osinsky, SJ Koester
Journal of Vacuum Science & Technology A 40 (4), 2022
292022
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