Low temperature electron mobility exceeding 104 cm2 /V s in MOCVD grown β -Ga2 O3 F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck
APL Materials 7 (12), 121110, 2019
103 2019 Sn doping of (010) β-Ga2 O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck
Applied Physics Letters 117 (22), 222102, 2020
94 2020 Vertical β 2 O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck
Applied Physics Letters 118 (16), 162109, 2021
72 2021 Modeling and analysis for thermal management in gallium oxide field-effect transistors C Yuan, Y Zhang, R Montgomery, S Kim, J Shi, A Mauze, T Itoh, JS Speck, ...
Journal of Applied Physics 127 (15), 154502, 2020
66 2020 Metal oxide catalyzed epitaxy (MOCATAXY) of 2 O3 films in various orientations grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, F Wu, JS Speck
APL Materials 8 (2), 021104, 2020
58 2020 H2 O vapor assisted growth of β-Ga2 O3 by MOCVD F Alema, Y Zhang, A Mauze, T Itoh, JS Speck, B Hertog, A Osinsky
AIP Advances 10 (8), 085002, 2020
42 2020 Enhancing the electron mobility in Si-doped (010) β-Ga2 O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ...
APL Materials 11 (2), 021110, 2023
37 2023 Thermal management strategies for gallium oxide vertical trench-fin MOSFETs RH Montgomery, Y Zhang, C Yuan, S Kim, J Shi, T Itoh, A Mauze, ...
Journal of Applied Physics 129 (8), 085301, 2021
33 2021 Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2 O3 Schottky diodes E Farzana, A Bhattacharyya, NS Hendricks, T Itoh, S Krishnamoorthy, ...
APL Materials 10 (11), 111104, 2022
22 2022 Epitaxial growth of β 2 O3 on (110) substrate by plasma-assisted molecular beam epitaxy T Itoh, A Mauze, Y Zhang, JS Speck
Applied Physics Letters 117 (15), 152105, 2020
21 2020 Fabrication of InGaN thin-film transistors using pulsed sputtering deposition T Itoh, A Kobayashi, K Ueno, J Ohta, H Fujioka
Scientific reports 6, 29500, 2016
20 2016 Over 1 kV Vertical GaN-on-GaN pn Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ...
IEEE Electron Device Letters 41 (12), 1806-1809, 2020
19 2020 Mg doping and diffusion in (010) β-Ga2 O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, TE Mates, H Peelaers, CG Van de Walle, ...
Journal of Applied Physics 130 (23), 235301, 2021
18 2021 Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1− x) 2O3 films by MOCVD F Alema, T Itoh, S Vogt, JS Speck, A Osinsky
Japanese Journal of Applied Physics 61 (10), 100903, 2022
15 2022 High-current-density indium nitride ultrathin-film transistors on glass substrates T Itoh, A Kobayashi, J Ohta, H Fujioka
Applied Physics Letters 109 (14), 142104, 2016
15 2016 Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy T Itoh, A Mauze, Y Zhang, JS Speck
APL Materials 11 (4), 041108, 2023
11 2023 Coherently strained (001) β-(Alx Ga1−x )2 O3 thin films on β-Ga2 O3 : Growth and compositional analysis A Mauze, T Itoh, Y Zhang, E Deagueros, F Wu, JS Speck
Journal of Applied Physics 132 (11), 115302, 2022
8 2022 β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels Y Zhang, A Mauze, F Alema, A Osinsky, T Itoh, JS Speck
Japanese Journal of Applied Physics 60 (1), 014001, 2020
8 2020 N2O grown high Al composition nitrogen doped β-(AlGa) 2O3/β-Ga2O3 using MOCVD F Alema, T Itoh, W Brand, M Tadjer, A Osinsky, JS Speck
Journal of Vacuum Science & Technology A 41 (4), 2023
7 2023 Controllable nitrogen doping of MOCVD Ga2O3 using NH3 F Alema, T Itoh, W Brand, A Osinsky, JS Speck
Applied Physics Letters 122 (25), 2023
3 2023 
Jim SpeckProfessor of Materials, UCSBПодтвержден адрес электронной почты в домене ucsb.edu