600-V Normally Off Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
299 2013 High-Quality Interface in Al₂O₃/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497 - 1499, 2013
195 * 2013 AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs S Yang, S Liu, Y Lu, C Liu, KJ Chen
IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015
111 2015 Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
99 2015 Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
Electron Devices Meeting (IEDM), 2013 IEEE International, 6.3. 1-6.3. 4, 2013
95 * 2013 Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
93 2013 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform Q Jiang, C Liu, Y Lu, KJ Chen
IEEE Electron Device Letters 34 (3), 357 - 359, 2013
73 2013 Surface nitridation for improved dielectric/III‐nitride interfaces in GaN MIS‐HEMTs KJ Chen, S Yang, Z Tang, S Huang, Y Lu, Q Jiang, S Liu, C Liu, B Li
physica status solidi (a) 212 (5), 1059-1065, 2015
62 2015 Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2015
57 2015 Dynamic Gate Stress-Induced S Yang, Y Lu, H Wang, S Liu, C Liu, KJ Chen
IEEE Electron Device Letters 37 (2), 157-160, 2015
53 2015 High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2 O3 gate dielectric for high-performance normally-off GaN MIS-HEMTs S Huang, Q Jiang, K Wei, G Liu, J Zhang, X Wang, Y Zheng, B Sun, ...
2014 IEEE International Electron Devices Meeting, 17.4. 1-17.4. 4, 2014
53 2014 Compatibility of AlN/SiNx x M Hua, Y Lu, S Liu, C Liu, K Fu, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 37 (3), 265-268, 2016
41 2016 Thermally induced threshold voltage instability of III-nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes S Yang, S Liu, C Liu, Z Tang, Y Lu, KJ Chen
2014 IEEE International Electron Devices Meeting, 17.2. 1-17.2. 4, 2014
40 2014 Investigation of SiNx S Yang, Z Tang, M Hua, Z Zhang, J Wei, Y Lu, KJ Chen
IEEE Journal of the Electron Devices Society 8, 358-364, 2020
33 2020 Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors S Yang, S Liu, C Liu, Y Lu, KJ Chen
Applied Physics Letters 105 (22), 223508, 2014
27 2014 III-Nitride transistors with photonic-ohmic drain for enhanced dynamic performances X Tang, B Li, Y Lu, H Wang, C Liu, J Wei, KJ Chen
2015 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2015
26 2015 A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs Q Jiang, Z Tang, C Liu, Y Lu, KJ Chen
IEEE Transactions on Electron Devices 61 (3), 762-768, 2014
24 2014 Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition Y Lu, Q Jiang, Z Tang, S Yang, C Liu, KJ Chen
Applied Physics Express 8 (6), 064101, 2015
23 2015 Normally off Al Y Lu, B Li, X Tang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE Transactions on Electron Devices 62 (3), 821-827, 2015
20 2015 Trapping mechanisms in insulated‐gate GaN power devices: Understanding and characterization techniques S Yang, S Liu, Y Lu, KJ Chen
physica status solidi (a) 214 (3), 1600607, 2017
14 2017 