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John Abraham
John Abraham
Lutron Technologies, LLC
Подтвержден адрес электронной почты в домене lutrontech.com - Главная страница
Название
Процитировано
Процитировано
Год
Strain engineering of the silicon-vacancy center in diamond
S Meesala, YI Sohn, B Pingault, L Shao, HA Atikian, J Holzgrafe, ...
Physical Review B 97 (20), 205444, 2018
3072018
Controlling the coherence of a diamond spin qubit through its strain environment
YI Sohn, S Meesala, B Pingault, HA Atikian, J Holzgrafe, M Gündoğan, ...
Nature communications 9 (1), 2012, 2018
2092018
Nanotesla magnetometry with the silicon vacancy in silicon carbide
JBS Abraham, C Gutgsell, D Todorovski, S Sperling, JE Epstein, ...
Physical Review Applied 15 (6), 064022, 2021
312021
Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation
JBS Abraham, BA Aguirre, JL Pacheco, G Vizkelethy, E Bielejec
Applied Physics Letters 109 (6), 2016
182016
A Gold(I) Oxide Double Perovskite: Ba2AuIO6
EA Pogue, J Bond, C Imperato, JBS Abraham, N Drichko, TM McQueen
Journal of the American Chemical Society 143 (45), 19033-19042, 2021
162021
Lithium source for focused ion beam implantation and analysis
M Titze, DL Perry, EA Auden, JL Pacheco, J Abraham, ES Bielejec
Journal of Vacuum Science & Technology B 39 (1), 2021
102021
Engineering a diamond spin-qubit with a nano-electro-mechanical system
YI Sohn, S Meesala, B Pingault, HA Atikian, J Holzgrafe, M Gundogan, ...
arXiv preprint arXiv:1706.03881, 2017
102017
Controlling the coherence of a diamond spin qubit through strain engineering
YI Sohn, S Meesala, B Pingault, HA Atikian, J Holzgrafe, M Gundogan, ...
arXiv preprint arXiv:1706.03881, 2017
42017
Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions
EC Auden, JL Pacheco, E Bielejec, G Vizkelethy, JBS Abraham, BL Doyle
IEEE Transactions on Nuclear Science 62 (6), 2919-2925, 2015
42015
Effect of Negative Thermal Expansion on the Zero-Phonon Line of Implanted Silicon Vacancy Color Centers in Diamond
S Revesz, A Misiara, JBS Abraham, ES Bielejec, H Li, M Titze
ACS Photonics, 2024
22024
Evaluation and Mitigation of Impurities in Additively Manufactured Epitaxial Gallium Nitride
MA Berkson, EA Pogue, ME Bartlett, SA Shuler, MM Kesavan, ...
Crystal Growth & Design 24 (8), 3149-3159, 2024
12024
Silicon carbide magnetometer and associated material formation methods
JB Abraham, BD Clader, R Osiander, CA Gutgsell, DJ Todorovski, ...
US Patent 11,993,864, 2024
2024
Negative Thermal Expansion in Diamond Probed using the Zero-Phonon Line of Silicon Vacancy Color Centers
SM Revesz, A Misiara, JBS Abraham, ES Bielejec, H Li, M Titze
2024 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2024
2024
Effects of Ion Implantation Damage on Photoluminescence of Silicon-Vacancy Centers in Diamond.
S Revesz, J Abraham, E Bielejec, H Li, M Titze
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2022
2022
Applications of a Quantum Phase Estimation Algorithm
SR Shepard, JBS Abraham
Quantum 2.0, QW2A. 13, 2022
2022
A Gold (I) Oxide Double Perovskite: Ba₂AuIO₆
EA Pogue, J Bond, C Imperato, JBS Abraham, N Drichko, TM McQueen
2021
High-density defect ensembles in SiC for superradiance and magnetometry
P Brereton, S Rittenhouse, J Wiedemann, J Vanhoy, J Abraham
Bulletin of the American Physical Society 65, 2020
2020
Protecting the spin coherence of silicon vacancy color centers from thermal noise using diamond MEMS
YI Sohn, S Meesala, B Pingault, HA Atikian, J Holzgrafe, M Gündoğan, ...
CLEO: QELS_Fundamental Science, FTu1E. 6, 2017
2017
Strain engineering of silicon vacancy cantilevers with diamond MEMS
S Meesala, YI Sohn, B Pingault, H Atikian, J Holzgrafe, M Gundogan, ...
APS March Meeting Abstracts 2017, R13. 013, 2017
2017
Quantum engineering of silicon vacancy centers using diamond cantilevers
Y Sohn, S Meesala, H Atikian, J Holzgrafe, MJ Burek, JL Pacheco, ...
THE 25TH INTERNATIONAL CONFERENCE ON ATOMIC PHYSICS (ICAP 2016), 2016
2016
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