| Characterization of GaN quantum discs embedded in Al x Ga 1− x N nanocolumns grown by molecular beam epitaxy J Ristić, E Calleja, MA Sanchez-Garcia, JM Ulloa, J Sanchez-Paramo, ... Physical Review B 68 (12), 125305, 2003 | 161 | 2003 |
| GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations JM Ulloa, R Gargallo-Caballero, M Bozkurt, M Del Moral, A Guzmán, ... Physical Review B—Condensed Matter and Materials Physics 81 (16), 165305, 2010 | 111 | 2010 |
| Suppression of InAs∕ GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer JM Ulloa, IWD Drouzas, PM Koenraad, DJ Mowbray, MJ Steer, HY Liu, ... Applied physics letters 90 (21), 2007 | 109 | 2007 |
| Interfacial Embedding of Laser‐Manufactured Fluorinated Gold Clusters Enabling Stable Perovskite Solar Cells with Efficiency over 24% P Guo, H Zhu, W Zhao, C Liu, L Zhu, Q Ye, N Jia, H Wang, X Zhang, ... Advanced Materials 33 (36), 2101590, 2021 | 84 | 2021 |
| Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy A Hierro, JM Ulloa, JM Chauveau, A Trampert, MA Pinault, E Tournié, ... Journal of applied physics 94 (4), 2319-2324, 2003 | 84 | 2003 |
| Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy JH Blokland, M Bozkurt, JM Ulloa, D Reuter, AD Wieck, PM Koenraad, ... Applied Physics Letters 94 (2), 2009 | 81 | 2009 |
| High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes G Tabares, A Hierro, JM Ulloa, A Guzman, E Munoz, A Nakamura, ... Applied Physics Letters 96 (10), 2010 | 68 | 2010 |
| Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots JM Ulloa, C Celebi, PM Koenraad, A Simon, E Gapihan, A Letoublon, ... Journal of applied physics 101 (8), 2007 | 64 | 2007 |
| Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer V Haxha, I Drouzas, JM Ulloa, M Bozkurt, PM Koenraad, DJ Mowbray, ... Physical Review B—Condensed Matter and Materials Physics 80 (16), 165334, 2009 | 58 | 2009 |
| Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop V Mlinar, M Bozkurt, JM Ulloa, M Ediger, G Bester, A Badolato, ... Physical Review B—Condensed Matter and Materials Physics 80 (16), 165425, 2009 | 56 | 2009 |
| Analysis of the modified optical properties and band structure of GaAs1− xSbx-capped InAs/GaAs quantum dots JM Ulloa, JM Llorens, M Del Moral, M Bozkurt, PM Koenraad, A Hierro Journal of Applied Physics 112 (7), 2012 | 44 | 2012 |
| Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared E Luna, M Hopkinson, JM Ulloa, A Guzman, E Munoz Applied physics letters 83 (15), 3111-3113, 2003 | 43 | 2003 |
| Carrier compensation by deep levels in Zn1− xMgxO/sapphire A Hierro, G Tabares, JM Ulloa, E Munoz, A Nakamura, T Hayashi, ... Applied Physics Letters 94 (23), 2009 | 38 | 2009 |
| Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells U Aeberhard, A Gonzalo, JM Ulloa Applied Physics Letters 112 (21), 2018 | 37 | 2018 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 36 | 2017 |
| InAs quantum dot morphology after capping with In, N, Sb alloyed thin films JG Keizer, JM Ulloa, AD Utrilla, PM Koenraad Applied Physics Letters 104 (5), 2014 | 36 | 2014 |
| AlGaN nanocolumns and AlGaN/GaN/AlGaN nanostructures grown by molecular beam epitaxy J Ristić, MA Sánchez‐García, JM Ulloa, E Calleja, J Sanchez‐Páramo, ... physica status solidi (b) 234 (3), 717-721, 2002 | 36 | 2002 |
| Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate AD Utrilla, DF Grossi, DF Reyes, A Gonzalo, V Braza, T Ben, D González, ... Applied Surface Science 444, 260-266, 2018 | 35 | 2018 |
| High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing JM Ulloa, JM Llorens, B Alén, DF Reyes, DL Sales, D González, A Hierro Applied Physics Letters 101 (25), 2012 | 35 | 2012 |
| Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications DF Reyes, V Braza, A Gonzalo, AD Utrilla, JM Ulloa, T Ben, D González Applied Surface Science 442, 664-672, 2018 | 32 | 2018 |
