| Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 178 | 2023 |
| Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020 | 128 | 2020 |
| Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ... IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021 | 112 | 2021 |
| 1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ... IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021 | 105 | 2021 |
| In situ Condition Monitoring of IGBTs Based on the Miller Plateau Duration J Liu, G Zhang, Q Chen, L Qi, Y Geng, J Wang IEEE Transactions on Power Electronics 34 (1), 769-782, 2018 | 103 | 2018 |
| Gate failure physics of SiC MOSFETs under short-circuit stress J Liu, G Zhang, B Wang, W Li, J Wang IEEE Electron Device Letters 41 (1), 103-106, 2019 | 97 | 2019 |
| 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities J Liu, M Xiao, Y Zhang, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2020 | 83 | 2020 |
| True breakdown voltage and overvoltage margin of GaN power HEMTs in hard switching JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang IEEE Electron Device Letters 42 (4), 505-508, 2021 | 71 | 2021 |
| Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 68 | 2020 |
| Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... IEEE Transactions on Power Electronics 36 (10), 10959-10964, 2021 | 64 | 2021 |
| Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ... IEEE Electron Device Letters 41 (9), 1328-1331, 2020 | 57 | 2020 |
| Robustness of cascode GaN HEMTs in unclamped inductive switching Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021 | 56 | 2021 |
| Study on miniaturized UHF antennas for partial discharge detection in high-voltage electrical equipment J Liu, G Zhang, J Dong, J Wang Sensors 15 (11), 29434-29451, 2015 | 51 | 2015 |
| Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control R Zhang, X Lin, J Liu, S Mocevic, D Dong, Y Zhang IEEE Transactions on Power Electronics 36 (2), 2033-2043, 2020 | 45 | 2020 |
| Breakthrough short circuit robustness demonstrated in vertical GaN Fin JFET R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Transactions on Power Electronics 37 (6), 6253-6258, 2021 | 42 | 2021 |
| Degradation of SiC MOSFETs under high-bias switching events JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 36 | 2021 |
| Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 35 | 2022 |
| IGBT aging monitoring and remaining lifetime prediction based on long short-term memory (LSTM) networks W Li, B Wang, J Liu, G Zhang, J Wang Microelectronics Reliability 114, 113902, 2020 | 32 | 2020 |
| Tuning avalanche path in vertical GaN JFETs by gate driver design J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, C Drowley, ... IEEE Transactions on Power Electronics 37 (5), 5433-5443, 2021 | 28 | 2021 |
| Robust through-fin avalanche in vertical GaN Fin-JFET with soft failure mode R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Electron Device Letters 43 (3), 366-369, 2022 | 27 | 2022 |
Yuhao ZhangUniversity of Hong KongПодтвержден адрес электронной почты в домене hku.hk