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Peide Ye
Peide Ye
Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University
Подтвержден адрес электронной почты в домене purdue.edu - Главная страница
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Процитировано
Год
Phosphorene: an unexplored 2D semiconductor with a high hole mobility
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye
ACS nano 8 (4), 4033-4041, 2014
67182014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, DY Peide
Chemical Society Reviews 44 (9), 2732-2743, 2015
15692015
Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode
Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ...
ACS nano 8 (8), 8292-8299, 2014
13622014
Bandgap engineering of two-dimensional semiconductor materials
A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ...
npj 2D Materials and Applications 4 (1), 29, 2020
9402020
Channel Length Scaling of MoS2 MOSFETs
H Liu, AT Neal, PD Ye
ACS nano 6 (10), 8563-8569, 2012
9352012
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano letters 14 (11), 6275-6280, 2014
8152014
Field-effect transistors made from solution-grown two-dimensional tellurene
Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ...
Nature Electronics 1 (4), 228-236, 2018
7992018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ...
Nature communications 6 (1), 8572, 2015
7352015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ...
Nature nanotechnology 2 (6), 378-384, 2007
6412007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang
Applied Physics Letters 86 (6), 2005
6102005
Phosphorene excites materials scientists
ES Reich
Nature 506 (7486), 19, 2014
5812014
InP-based transistor fabrication
P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza
US Patent 8,329,541, 2012
5502012
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric
H Liu, DY Peide
IEEE electron device letters 33 (4), 546-548, 2012
5432012
Steep-slope hysteresis-free negative capacitance MoS2 transistors
M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ...
Nature nanotechnology 13 (1), 24-28, 2018
5412018
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS nano 8 (10), 10035-10042, 2014
5042014
A ferroelectric semiconductor field-effect transistor
M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ...
Nature Electronics 2 (12), 580-586, 2019
5032019
Electrons in a periodic magnetic field induced by a regular array of micromagnets
PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ...
Physical review letters 74 (15), 3013, 1995
4501995
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ...
Applied Physics Letters 83 (1), 180-182, 2003
4172003
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y Xuan, YQ Wu, PD Ye
IEEE Electron Device Letters 29 (4), 294-296, 2008
4152008
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions
Y Xu, C Cheng, S Du, J Yang, B Yu, J Luo, W Yin, E Li, S Dong, P Ye, ...
ACS nano 10 (5), 4895-4919, 2016
3962016
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