| Antibacterial activities of graphene oxide–molybdenum disulfide nanocomposite films TI Kim, B Kwon, J Yoon, IJ Park, GS Bang, YK Park, YS Seo, SY Choi ACS applied materials & interfaces 9 (9), 7908-7917, 2017 | 183 | 2017 |
| Flexible and transparent graphene electrode architecture with selective defect decoration for organic light‐emitting diodes IJ Park, TI Kim, T Yoon, S Kang, H Cho, NS Cho, JI Lee, TS Kim, SY Choi Advanced Functional Materials 28 (10), 1704435, 2018 | 91 | 2018 |
| Chemically exfoliated 1T-phase transition metal dichalcogenide nanosheets for transparent antibacterial applications TI Kim, J Kim, IJ Park, KO Cho, SY Choi 2D Materials 6 (2), 025025, 2019 | 56 | 2019 |
| Enhanced triboelectric nanogenerator based on tungsten disulfide via thiolated ligand conjugation TI Kim, IJ Park, S Kang, TS Kim, SY Choi ACS Applied Materials & Interfaces 13 (18), 21299-21309, 2021 | 47 | 2021 |
| Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes IJ Park, TI Kim, S Kang, GW Shim, Y Woo, TS Kim, SY Choi Nanoscale 10 (34), 16069-16078, 2018 | 28 | 2018 |
| Graphene electrode with tunable charge transport in thin-film transistors IJ Park, TI Kim, IT Cho, CW Song, JW Yang, H Park, WS Cheong, SG Im, ... Nano Research 11, 274-286, 2018 | 18 | 2018 |
| Synthesis of ultrathin metal nanowires with chemically exfoliated tungsten disulfide nanosheets TI Kim, IJ Park, SY Choi Nano Letters 20 (5), 3740-3746, 2020 | 17 | 2020 |
| Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors HA Lee, K Yatsu, TI Kim, HI Kwon, IJ Park ACS Applied Materials & Interfaces 14 (50), 56416-56426, 2022 | 14 | 2022 |
| Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors SH Lim, TI Kim, IJ Park, HI Kwon ACS Applied Electronic Materials 5 (9), 4816-4825, 2023 | 11 | 2023 |
| Band alignment of 2 H-phase two-dimensional MoS2/graphene oxide van der Waals heterojunction IJ Park, TI Kim Journal of Alloys and Compounds 936, 168244, 2023 | 9 | 2023 |
| Charge transfer dynamics of doped graphene electrodes for organic light-emitting diodes IJ Park, TI Kim, SY Choi ACS Applied Materials & Interfaces 14 (38), 43907-43916, 2022 | 9 | 2022 |
| Selectively Defect‐Healed Graphene Electrodes for Tungsten Diselenide Thin‐Film Transistors TI Kim, IJ Park Advanced Electronic Materials 8 (1), 2100729, 2022 | 6 | 2022 |
| Tunable Band Alignment of Phase-Engineered Two-Dimensional MoS2 Monolayers IJ Park, TI Kim ACS Applied Electronic Materials 5 (11), 6212-6220, 2023 | 5 | 2023 |
| Strain modulation effects on two-dimensional tellurium for advanced p-type transistor applications JS Oh, TI Kim, HI Kwon, IJ Park Applied Surface Science 651, 159288, 2024 | 4 | 2024 |
| Band alignment of γ-phase CuI/high-k Al2O3 heterointerface by X-ray photoelectron spectroscopy TI Kim, HA Lee, HI Kwon, IJ Park Surfaces and Interfaces 46, 104190, 2024 | 4 | 2024 |
| Surface crystallization effects on tellurium oxide thin films for low-power complementary logic circuit applications JY Lee, TI Kim, HI Kwon, IJ Park Applied Surface Science, 160536, 2024 | 2 | 2024 |
| Effects of solution processable CuI thin films with Al 2 O 3-based sandwiched architecture for high-performance p-type transistor applications HA Lee, TI Kim, HI Kwon, IJ Park Journal of Materials Chemistry C 12 (18), 6457-6468, 2024 | 2 | 2024 |
| Transition metal chalcogenide for preparing metal nanostructures, metal nanostructures obtained thereby, electronic instrument including the same, and method for manufacturing … SY Choi, TI Kim, IJ Park US Patent App. 17/090,054, 2021 | 1 | 2021 |
| Band offset analysis at two-dimensional molybdenum disulfide/boron nitride heterointerface for non-volatile memory applications HE Dang, MJ Kim, TI Kim, IJ Park Journal of Alloys and Compounds 1010, 178160, 2025 | | 2025 |
| Vacancy Engineering for High-Performance p-Type CuI Thin-Film Transistors HA Lee, K Yatsu, TI Kim, IJ Park, HI Kwon 한국표면공학회 학술발표회 초록집, 200-200, 2023 | | 2023 |
