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JEONGHO Park
JEONGHO Park
Подтвержден адрес электронной почты в домене udel.edu
Название
Процитировано
Процитировано
Год
Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE)
J Park, WC Mitchel, L Grazulis, HE Smith, KG Eyink, JJ Boeckl, ...
Advanced Materials 22 (37), 4140-4145, 2010
1542010
Prospects for rare earth doped GaN lasers on Si
AJ Steckl, JH Park, JM Zavada
Materials Today 10 (7-8), 20-27, 2007
1422007
Laser action in Eu-doped GaN thin-film cavity at room temperature
JH Park, AJ Steckl
Applied physics letters 85 (20), 4588-4590, 2004
1332004
Optical and magnetic properties of Eu-doped GaN
J Hite, GT Thaler, R Khanna, CR Abernathy, SJ Pearton, JH Park, ...
Applied physics letters 89 (13), 2006
982006
Demonstration of a visible laser on silicon using Eu-doped GaN thin films
JH Park, AJ Steckl
Journal of applied physics 98 (5), 2005
882005
Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene
J Park, WC Mitchel, S Elhamri, L Grazulis, J Hoelscher, K Mahalingam, ...
Nature communications 6 (1), 5677, 2015
512015
Carbon nanotube fiber field emission array cathodes
SB Fairchild, P Zhang, J Park, TC Back, D Marincel, Z Huang, M Pasquali
IEEE Transactions on Plasma Science 47 (5), 2032-2038, 2019
502019
Approach to multifunctional device platform with epitaxial graphene on transition metal oxide
J Park, T Back, WC Mitchel, SS Kim, S Elhamri, J Boeckl, SB Fairchild, ...
Scientific Reports 5 (1), 14374, 2015
492015
Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots
L Bodiou, A Braud, JL Doualan, R Moncorgé, JH Park, C Munasinghe, ...
Journal of Applied Physics 105 (4), 2009
452009
Measurement of free-carrier nonlinearities in ZnSe based on the Z-scan technique with a nanosecond laser
KH Lee, WR Cho, JH Park, JS Kim, SH Park, U Kim
Optics letters 19 (15), 1116-1118, 1994
431994
Temperature comparison of looped and vertical carbon nanotube fibers during field emission
P Zhang, J Park, SB Fairchild, NP Lockwood, YY Lau, J Ferguson, T Back
Applied Sciences 8 (7), 1175, 2018
392018
Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene
JH Park, WC Mitchel, HE Smith, L Grazulis, KG Eyink
Carbon 48 (5), 1670-1673, 2010
342010
Site specific Eu3+ stimulated emission in GaN host
JH Park, AJ Steckl
Applied physics letters 88 (1), 2006
302006
Field emission microscopy of carbon nanotube fibers: Evaluating and interpreting spatial emission
TY Posos, SB Fairchild, J Park, SV Baryshev
Journal of Vacuum Science & Technology B 38 (2), 2020
252020
A Deep Level Transient Spectroscopy Study of Electron and Proton Irradiated GaAs Diodes
JH Warner, CD Cress, SR Messenger, RJ Walters, SA Ringel, J Park
IEEE Transactions on nuclear science 57 (4), 1940-1945, 2010
222010
Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC
JH Park, WC Mitchel, L Grazulis, K Eyink, HE Smith, JE Hoelscher
Carbon 49 (2), 631-635, 2011
202011
Visible lasing from GaN: Eu optical cavities on sapphire substrates
JH Park, AJ Steckl
Optical Materials 28 (6-7), 859-863, 2006
172006
Strongly anisotropic field emission from highly aligned carbon nanotube films
SB Fairchild, TA de Assis, JH Park, M Cahay, J Bulmer, DE Tsentalovich, ...
Journal of Applied Physics 129 (12), 2021
152021
Band gap formation in graphene by in-situ doping
J Park, WC Mitchel, GJ Brown, S Elhamri, L Grazulis, HE Smith, ...
Applied Physics Letters 98 (20), 2011
142011
In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy
J Lee, V Varshney, J Park, BL Farmer, AK Roy
Nanoscale 8 (18), 9704-9713, 2016
112016
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Статьи 1–20