Maximizing the performance of 650-V p-GaN gate HEMTs: Dynamic RON characterization and circuit design considerations H Wang, J Wei, R Xie, C Liu, G Tang, KJ Chen
IEEE Transactions on Power Electronics 32 (7), 5539-5549, 2016
266 2016 Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ...
Nature electronics 4 (8), 595-603, 2021
215 2021 Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in J Wei, R Xie, H Xu, H Wang, Y Wang, M Hua, K Zhong, G Tang, J He, ...
IEEE Electron Device Letters 40 (4), 526-529, 2019
157 2019 Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
129 2016 High Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 41 (1), 26-29, 2019
122 2019 Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type J He, J Wei, S Yang, Y Wang, K Zhong, KJ Chen
IEEE Transactions on Electron Devices 66 (8), 3453-3458, 2019
112 2019 Low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen
IEEE Electron Device Letters 36 (12), 1287-1290, 2015
100 2015 Low ON-resistance SiC trench/planar MOSFET with reduced OFF-state oxide field and low gate charges J Wei, M Zhang, H Jiang, CH Cheng, KJ Chen
IEEE Electron Device Letters 37 (11), 1458-1461, 2016
97 2016 Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen
IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017
93 2017 Normally-Off LPCVD-SiNx M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen
IEEE Electron Device Letters 38 (7), 929-932, 2017
90 2017 Dynamic degradation in SiC trench MOSFET with a floating p-shield revealed with numerical simulations J Wei, M Zhang, H Jiang, H Wang, KJ Chen
IEEE Transactions on Electron Devices 64 (6), 2592-2598, 2017
88 2017 Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy S Yang, S Huang, J Wei, Z Zheng, Y Wang, J He, KJ Chen
IEEE Electron Device Letters 41 (5), 685-688, 2020
77 2020 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
76 2017 OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020
73 2020 SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications H Jiang, J Wei, X Dai, C Zheng, M Ke, X Deng, Y Sharma, I Deviny, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
73 2017 SiC trench MOSFET with shielded fin-shaped gate to reduce oxide field and switching loss H Jiang, J Wei, X Dai, M Ke, I Deviny, P Mawby
IEEE electron device letters 37 (10), 1324-1327, 2016
70 2016 E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
68 2020 GaN power IC technology on p-GaN gate HEMT platform J Wei, G Tang, R Xie, KJ Chen
Japanese Journal of Applied Physics 59 (SG), SG0801, 2020
65 2020 Planar GaN power integration–the world is flat KJ Chen, J Wei, G Tang, H Xu, Z Zheng, L Zhang, W Song
2020 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2020
63 2020 Proposal of a GaN/SiC hybrid field-effect transistor for power switching applications J Wei, H Jiang, Q Jiang, KJ Chen
IEEE Transactions on Electron Devices 63 (6), 2469-2473, 2016
60 2016