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Suresh Sundaram
Suresh Sundaram
Associate Professor, Georgia Tech Europe
Подтвержден адрес электронной почты в домене georgiatech-metz.fr - Главная страница
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Процитировано
Год
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science, 2018
3202018
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature Materials, 2018
2592018
Vertical full-colour micro-LEDs via 2D materials-based layer transfer
J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ...
Nature 614 (7946), 81-87, 2023
1742023
Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy
X Li, S Sundaram, YE Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ...
Crystal Growth and Design, 2016
1392016
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ...
Optical Materials Express 4 (5), 1030-1041, 2014
1292014
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
T Ayari, S Sundaram, X Li, YE Gmili, PL Voss, JP Salvestrini, ...
Applied Physics letters 108, 171106, 2016
922016
Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems
YHCBASSSVAPVJPSA Ougazzaden
Sensors 16 (3), 273, 2016
882016
Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions
JH Kang, H Shin, KS Kim, MK Song, D Lee, Y Meng, C Choi, JM Suh, ...
Nature materials 22 (12), 1470-1477, 2023
712023
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
K Pantzas, Y El Gmili, J Dickerson, S Gautier, L Largeau, O Mauguin, ...
Journal of crystal growth 370, 57-62, 2013
712013
Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications
T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ...
Scientific reports 7 (1), 15212, 2017
682017
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ...
Acta Materialia 61 (17), 6587-6596, 2013
622013
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ...
Scientific reports 7 (1), 786, 2017
532017
Experimental study and device design of NO, NO2, and NH3 gas detection for a wide dynamic and large temperature range using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, YE Gmili, ...
IEEE Sensors, 2016
522016
BAlN thin layers for deep UV applications
X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ...
physica status solidi (a) 212 (4), 745-750, 2015
522015
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ...
Journal of Crystal Growth 414, 119-122, 2015
502015
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ...
Optical Materials Express 5 (2), 380-392, 2015
462015
Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery
CE Munson, Q Gaimard, K Merghem, S Sundaram, DJ Rogers, ...
Journal of Physics D: Applied Physics 51 (3), 035101, 2017
432017
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors
C Bishop, JP Salvestrini, Y Halfaya, S Sundaram, Y El Gmili, L Pradere, ...
Applied Physics Letters 106 (24), 2015
392015
Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, S Suresh, ...
Nanotechnology 23 (45), 455707, 2012
362012
Improving InGaN heterojunction solar cells efficiency using a semi bulk absorber
M Arif, W Elhuni, J Streque, S Sundaram, S Belahsene, YE Gmili, X li, ...
Solar Energy Materials and Solar Cells, 2017
342017
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