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Sungjun Kim
Sungjun Kim
Division of Electronics and Electrical Engineering, Dongguk University
Подтвержден адрес электронной почты в домене dongguk.edu
Название
Процитировано
Процитировано
Год
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
2502017
Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications
C Mahata, H Algadi, J Lee, S Kim, T Lee
Measurement 151, 107095, 2020
1382020
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
1172019
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
S Kim, S Jung, MH Kim, S Cho, BG Park
Applied Physics Letters 106 (21), 2015
1132015
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
1032018
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
M Ismail, U Chand, C Mahata, J Nebhen, S Kim
Journal of Materials Science & Technology 96, 94-102, 2022
972022
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
M Ismail, C Mahata, S Kim
Journal of Alloys and Compounds 892, 162141, 2022
862022
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
M Ismail, H Abbas, C Choi, S Kim
Applied Surface Science 529, 147107, 2020
802020
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application
JH Ryu, C Mahata, S Kim
Journal of Alloys and Compounds 850, 156675, 2021
792021
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
MK Rahmani, M Ismail, C Mahata, S Kim
Results in Physics 18, 103325, 2020
772020
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
S Kim, BG Park
Applied Physics Letters 108 (21), 2016
752016
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
C Mahata, M Kang, S Kim
Nanomaterials 10 (10), 2069, 2020
732020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device
H Ryu, S Kim
Nanomaterials 10 (11), 2159, 2020
722020
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ...
Journal of Alloys and Compounds 826, 154434, 2020
722020
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer
M Ismail, H Abbas, C Choi, S Kim
Journal of Alloys and Compounds 835, 155256, 2020
672020
Investigations of structural, electronic and optical properties of TM-GaO3 (TM= Sc, Ti, Ag) perovskite oxides for optoelectronic applications: a first principles study
MI Hussain, RMA Khalil, F Hussain, M Imran, AM Rana, S Kim
Materials Research Express 7 (1), 015906, 2020
662020
Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing
JH Ryu, S Kim
Chaos, Solitons & Fractals 140, 110236, 2020
652020
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ...
Applied Surface Science 529, 147167, 2020
622020
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim
ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021
612021
Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering
J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ...
ACS applied materials & interfaces 12 (30), 33908-33916, 2020
612020
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