Light-driven Raman coherence as a nonthermal route to ultrafast topology switching in a Dirac semimetal C Vaswani, LL Wang, DH Mudiyanselage, Q Li, PM Lozano, GD Gu, ...
Physical Review X 10 (2), 021013, 2020
115 2020 Terahertz second-harmonic generation from lightwave acceleration of symmetry-breaking nonlinear supercurrents C Vaswani, M Mootz, C Sundahl, DH Mudiyanselage, JH Kang, X Yang, ...
Physical Review Letters 124 (20), 207003, 2020
91 2020 High-Photoresponsivity Self-Powered a -, ε-, and β-Ga2 O3 /p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD Y Ma, T Chen, X Zhang, W Tang, B Feng, Y Hu, L Zhang, X Zhou, X Wei, ...
ACS Applied Materials & Interfaces 14 (30), 35194-35204, 2022
53 2022 Ultrafast Control of Excitonic Rashba Fine Structure by Phonon Coherence in the Metal Halide Perovskite Z Liu, C Vaswani, X Yang, X Zhao, Y Yao, Z Song, D Cheng, Y Shi, L Luo, ...
Physical Review Letters 124 (15), 157401, 2020
50 2020 A review of ultrawide bandgap materials: properties, synthesis and devices M Xu, D Wang, K Fu, DH Mudiyanselage, H Fu, Y Zhao
Oxford Open Materials Science 2 (1), itac004, 2022
45 2022 Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ...
Materials Today 49, 296-323, 2021
30 2021 Helicity-dependent terahertz photocurrent and phonon dynamics in hybrid metal halide perovskites D Cheng, Z Liu, L Luo, C Vaswani, JM Park, Y Yao, Z Song, C Huang, ...
The Journal of Chemical Physics 151 (24), 2019
20 2019 High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant W Tang, Y Ma, X Zhang, X Zhou, L Zhang, X Zhang, T Chen, X Wei, W Lin, ...
Applied Physics Letters 120 (21), 2022
19 2022 High-performance ε-Ga2O3 solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer Y Hu, L Zhang, T Chen, Y Ma, W Tang, Z Huang, BT Li, K Xu, ...
Vacuum 213, 112130, 2023
14 2023 Design Space of Delta-Doped β-(Alx 1-x )2 O3 /Ga2 O3 High-Electron Mobility Transistors D Wang, DH Mudiyanselage, H Fu
IEEE Transactions on Electron Devices 69 (1), 69-74, 2021
14 2021 High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD DH Mudiyanselage, D Wang, B Da, Z He, H Fu
Applied Physics Express 17 (1), 014005, 2024
13 2024 Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx /β‐Ga2 O3 p–n Heterojunction Diodes S Ghosh, DH Mudiyanselage, F Kargar, Y Zhao, H Fu, AA Balandin
Advanced Electronic Materials 10 (2), 2300501, 2024
12 2024 Low-frequency noise in β-(AlxGa1− x) 2O3 Schottky barrier diodes S Ghosh, DH Mudiyanselage, S Rumyantsev, Y Zhao, H Fu, S Goodnick, ...
Applied Physics Letters 122 (21), 2023
12 2023 Ultrawide bandgap vertical β-(AlxGa1− x) 2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates DH Mudiyanselage, D Wang, H Fu
Journal of Vacuum Science & Technology A 41 (2), 2023
12 2023 Wide Bandgap Vertical kV-Class β -Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination DH Mudiyanselage, D Wang, H Fu
IEEE Journal of the Electron Devices Society 10, 89-97, 2021
11 2021 The Mechanism of Performance Variations in MoS2 Vertical Schottky Metal–Semiconductor Photodiode Based on Thermionic Emission Theory X Zhang, X Duan, W Niu, X Liu, X Zou, H Huang, DH Mudiyanselage, ...
IEEE Transactions on Electron Devices 69 (10), 5644-5648, 2022
9 2022 Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications DH Mudiyanselage, D Wang, Y Zhao, H Fu
Journal of Applied Physics 131 (21), 2022
7 2022 Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor DH Mudiyanselage, D Wang, B Da, Z He, H Fu
Applied Physics Express 17 (7), 074001, 2024
6 2024 Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3 C Leblanc, DH Mudiyanselage, S Song, H Zhang, AV Davydov, H Fu, ...
Nanoscale 15 (23), 9964-9972, 2023
6 2023 Design of kV-Class and Low D Wang, DH Mudiyanselage, H Fu
IEEE Transactions on Electron Devices, 2023
4 * 2023 
Houqiang FuAssistant Professor, School of ECEE, Arizona State UniversityПодтвержден адрес электронной почты в домене asu.edu