Подписаться
S. Samukawa, Seiji Samukawa
S. Samukawa, Seiji Samukawa
Institute of Fluid Science and Advanced Institute for Material Research, Tohoku University
Подтвержден адрес электронной почты в домене ifs.tohoku.ac.jp - Главная страница
Название
Процитировано
Процитировано
Год
The 2017 Plasma Roadmap: Low temperature plasma science and technology
I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ...
Journal of Physics D: Applied Physics 50 (32), 323001, 2017
10842017
The 2012 plasma roadmap
S Samukawa, M Hori, S Rauf, K Tachibana, P Bruggeman, G Kroesen, ...
Journal of Physics D: Applied Physics 45 (25), 253001, 2012
8472012
Plasma processing method and equipment used therefor
S Samukawa
US Patent 5,827,435, 1998
4601998
Neutral particle beam processing apparatus
K Ichiki, K Yamauchi, H Hiyama, S Samukawa
US Patent 6,861,642, 2005
3862005
Low dielectric constant insulating film and method for forming the same
S Samukawa, S Yasuhara, S Kadomura, T Shimayama, H Yano, K Tajima, ...
US Patent 8,828,886, 2014
3732014
The 2022 Plasma Roadmap: low temperature plasma science and technology
I Adamovich, S Agarwal, E Ahedo, LL Alves, S Baalrud, N Babaeva, ...
Journal of Physics D: Applied Physics 55 (37), 373001, 2022
3712022
Beam processing apparatus
K Ichiki, K Yamauchi, H Hiyama, S Samukawa
US Patent 6,849,857, 2005
3122005
Method of forming structures using a neutral beam
T Kubota, M Utsuno, T Nozawa, S Samukawa, HH Chen
US Patent 11,643,724, 2023
2862023
Plasma Treatment Method and Plasma Etching Method
Y Hoshino, S Samukawa
US Patent App. 11/631,597, 2008
2422008
Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source
S Samukawa, K Sakamoto, K Ichiki
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (5 …, 2002
2132002
Ultimate top-down etching processes for future nanoscale devices: Advanced neutral-beam etching
S Samukawa
Japanese journal of applied physics 45 (4R), 2395, 2006
1942006
Pulse-time modulated plasma discharge for highly selective, highly anisotropic and charge-free etching
S Samukawa, T Mieno
Plasma Sources Science and Technology 5 (2), 132, 1996
1671996
Time‐modulated electron cyclotron resonance plasma discharge for controlling generation of reactive species
S Samukawa, S Furuoya
Applied physics letters 63 (15), 2044-2046, 1993
1631993
Highly selective and highly anisotropic SiO2 etching in pulse-time modulated electron cyclotron resonance plasma
SSS Samukawa
Japanese journal of applied physics 33 (4S), 2133, 1994
1361994
Pulse–time‐modulated electron cyclotron resonance plasma discharge for highly selective, highly anisotropic, and charge‐free etching
S Samukawa, H Ohtake, T Mieno
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (6 …, 1996
1351996
Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning
S Samukawa
Applied physics letters 64 (25), 3398-3400, 1994
1201994
Low-k materials-05EC01 Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical …
A Wada, T Sasaki, S Yasuhara, S Samukawa
Japanese Journal of Applied Physics 51 (5), 2012
1042012
Pulse‐time modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and less‐charging polycrystalline silicon patterning
S Samukawa, K Terada
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
1001994
Dynamics of pulsed-power chlorine plasmas
MV Malyshev, VM Donnelly, JI Colonell, S Samukawa
Journal of applied physics 86 (9), 4813-4820, 1999
991999
High-efficiency neutral-beam generation by combination of inductively coupled plasma and parallel plate DC bias
S Samukawa, K Sakamoto, K Ichiki
Japanese Journal of Applied Physics 40 (7B), L779, 2001
932001
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20