Qi Liu

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	23363	15485
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Hangbing LvInstitute of Microelectronics, Chinese Academy of SciencesПодтвержден адрес электронной почты в домене ime.ac.cn
Weihua GuanPennsylvania State UniversityПодтвержден адрес электронной почты в домене psu.edu
J. Joshua YangUniversity of Southern California, Arthur B. Freeman Chair Professor, IEEE Fellow / NAI FellowПодтвержден адрес электронной почты в домене usc.edu
Hyunsang HwangPOSTECH, KoreaПодтвержден адрес электронной почты в домене postech.ac.kr
Wei D. LuJames R. Mellor Professor, EECS, Univ of Michigan, IEEE Fellow. co-founder MemryX Inc, Crossbar Inc.Подтвержден адрес электронной почты в домене umich.edu
Bin GaoTsinghua UniversityПодтвержден адрес электронной почты в домене pku.edu.cn
Ilia ValovResearch Centre Juelich, RWTH-AachenПодтвержден адрес электронной почты в домене fz-juelich.de
Daniele IelminiProfessor of ElectronicsПодтвержден адрес электронной почты в домене elet.polimi.it

Qi Liu

Fudan University

Подтвержден адрес электронной почты в домене ime.ac.cn

Nonvolatile memory resistive switching memory memristor


Название По числу цитат По году По названию	Процитировано Процитировано	Год
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application YC Yang, F Pan, Q Liu, M Liu, F Zeng Nano letters 9 (4), 1636-1643, 2009	1007	2009
Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou Nature Nanotechnology 15 (7), 545-557, 2020	814	2020
Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu Advanced Materials 24 (14), 1844, 2012	731	2012
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	650	2019
Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu ACS nano 4 (10), 6162-6168, 2010	490	2010
Memristor with Ag‐Cluster‐Doped TiO₂ Films as Artificial Synapse for Neuroinspired Computing X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu Advanced Functional Materials 28 (1), 1705320, 2018	467	2018
Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ... Nanotechnology 21 (4), 045202, 2009	387	2009
An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ... IEEE Electron Device Letters 39 (2), 308-311, 2017	360	2017
An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ... Nature communications 11 (1), 51, 2020	359	2020
Vacancy‐Induced Synaptic Behavior in 2D WS₂ Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ... Small 15 (24), 1901423, 2019	355	2019
Resistive switching memory effect of ZrO2 films with Zr+ implanted Q Liu, W Guan, S Long, R Jia, M Liu, J Chen Applied physics letters 92 (1), 2008	354	2008
Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu Advanced Functional Materials 24 (36), 5679-5686, 2014	352	2014
Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2 nanosheets for organic pollutants degradation under visible LED light irradiation K Dai, L Lu, C Liang, Q Liu, G Zhu Applied Catalysis B: Environmental 156, 331-340, 2014	341	2014
Nonpolar Nonvolatile Resistive Switching in Cu Doped W Guan, S Long, Q Liu, M Liu, W Wang IEEE Electron Device Letters 29 (5), 434-437, 2008	322	2008
Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ... Advanced materials 31 (7), 1805284, 2019	297	2019
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou Advanced Functional Materials 28 (40), 1803728, 2018	271	2018
Improvement of Resistive Switching Properties in -Based ReRAM With Implanted Ti Ions Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu IEEE Electron Device Letters 30 (12), 1335-1337, 2009	265	2009
Memory materials and devices: From concept to application Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou InfoMat 2 (2), 261-290, 2020	238	2020
On the resistive switching mechanisms of Cu/ZrO2: Cu/Pt W Guan, M Liu, S Long, Q Liu, W Wang Applied Physics Letters 93 (22), 2008	238	2008
Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu Adv. Mater 28 (48), 10623-10629, 2016	237	2016

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