Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ...
Nature communications 9 (1), 671, 2018
327 2018 Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures S Peng, M Wang, H Yang, L Zeng, J Nan, J Zhou, Y Zhang, A Hallal, ...
Scientific reports 5 (1), 18173, 2015
189 2015 Calculation of intrinsic spin Hall conductivity by Wannier interpolation J Qiao, J Zhou, Z Yuan, W Zhao
Physical Review B 98 (21), 214402, 2018
137 2018 Intrinsic spin Hall conductivity of the semimetals J Zhou, J Qiao, A Bournel, W Zhao
Physical Review B 99 (6), 060408, 2019
106 2019 Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures S Peng, W Zhao, J Qiao, L Su, J Zhou, H Yang, Q Zhang, Y Zhang, ...
Applied Physics Letters 110 (7), 2017
93 2017 Large Tunneling Magnetoresistance in VSe2 /MoS2 Magnetic Tunnel Junction J Zhou, J Qiao, CG Duan, A Bournel, KL Wang, W Zhao
ACS applied materials & interfaces 11 (19), 17647-17653, 2019
91 2019 Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices S Peng, D Zhu, J Zhou, B Zhang, A Cao, M Wang, W Cai, K Cao, W Zhao
Advanced Electronic Materials 5 (8), 1900134, 2019
88 2019 Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions J Zhou, W Zhao, Y Wang, S Peng, J Qiao, L Su, L Zeng, N Lei, L Liu, ...
Applied Physics Letters 109 (24), 2016
34 2016 Large voltage-controlled magnetic anisotropy in the SrTiO3/Fe/Cu structure S Peng, S Li, W Kang, J Zhou, N Lei, Y Zhang, H Yang, X Li, PK Amiri, ...
Applied Physics Letters 111 (15), 2017
21 2017 Silicene spintronics: Fe (111)/silicene system for efficient spin injection J Zhou, A Bournel, Y Wang, X Lin, Y Zhang, W Zhao
Applied Physics Letters 111 (18), 2017
15 2017 High tunnel magnetoresistance in Mo/CoFe/MgO magnetic tunnel junction: A first-principles study J Zhou, W Zhao, S Peng, J Qiao, JO Klein, X Lin, Y Zhang, A Bournel
IEEE Transactions on Magnetics 53 (11), 1-4, 2017
13 2017 Enhancement of perpendicular magnetic anisotropy through Fe insertion at the CoFe/W interface S Peng, L Wang, X Li, Z Wang, J Zhou, J Qiao, R Chen, Y Zhang, ...
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
11 2018 Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions JQ Zhou, HY Zhou, A Bournel, WS Zhao
Science China Physics, Mechanics & Astronomy 63, 1-7, 2020
9 2020 Controllable spin current in van der Waals ferromagnet J Zhou, JC Charlier
Physical Review Research 3 (4), L042033, 2021
5 2021 Guidelines for accurate and efficient calculations of mobilities in two-dimensional semiconductors J Zhou, S Poncé, JC Charlier
Physical Review B 110 (12), 125304, 2024
2 2024 Magnetic tunnel junction with TMR enhancement W Zhao, J Zhou
US Patent App. 16/147,463, 2019
2 2019 Advanced nanoscale magnetic tunnel junctions for low power computing Z Wang, S Peng, M Wang, X Zhang, W Cai, J Zhou, K Cao, W Zhao
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2018
2 2018 Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM W Cai, K Cao, M Wang, S Peng, J Zhou, A Cao, B Zhang, L Wang, ...
2017 17th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2017
2 2017 Enhanced Spin Hall Ratio in Two-Dimensional III-V Semiconductors J Zhou, S Poncé, JC Charlier
npj Computational Materials 10, 247, 2024
1 2024 
Weisheng ZhaoFert Beijing Institute, Beihang UniversityПодтвержден адрес электронной почты в домене buaa.edu.cn