| Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic … DP Sahu, K Park, PH Chung, J Han, TS Yoon Scientific Reports 13 (1), 9592, 2023 | 19 | 2023 |
| Improvement of forming-free threshold switching reliability of CeO2-based selector device by controlling volatile filament formation behaviors DP Sahu, K Park, J Han, TS Yoon APL Materials 10 (5), 2022 | 17 | 2022 |
| Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application K Beom, J Han, HM Kim, TS Yoon Nanoscale 13 (26), 11370-11379, 2021 | 6 | 2021 |
| Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide J Han, B Jeong, Y Kim, J Suh, H Jeong, HM Kim, TS Yoon Materials Today Advances 15, 100264, 2022 | 5 | 2022 |
| Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO x/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution B Jeong, PH Chung, J Han, T Noh, TS Yoon Nanoscale 16 (11), 5737-5749, 2024 | 3 | 2024 |
| Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2− x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment J Han, B Jeong, DP Sahu, HM Kim, TS Yoon Journal of Alloys and Compounds 951, 169858, 2023 | 2 | 2023 |
| Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors J Han, K Park, HM Kim, TS Yoon Advanced Electronic Materials 9 (4), 2201110, 2023 | 1 | 2023 |
| Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoOx Ion … B Jeong, J Han, T Noh, TS Yoon ACS Applied Electronic Materials 5 (6), 3470-3479, 2023 | | 2023 |
| Low-Operation Voltage Non-Volatile Memory Characteristics with Oxide-Semiconductor Thin-Film Transistors Through Interaction Between Oxide Semiconductor Channel and Gate Oxide J Han, B Jeong, TS Yoon Materials Research Society, 2023 | | 2023 |
| Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv … J Han, K Park, HM Kim, TS Yoon Advanced Electronic Materials 9 (4), 2023 | | 2023 |
| Charge-Storage-Based vs. Non-Charge-Storage-Based 1T Non-Volatile Memory through the Interaction between Oxide Semiconductor Channel and Gate Oxide Layer J Han, B Jeong, T Noh, TS Yoon IEEE, 2023 | | 2023 |
| Non-Charge Storage Based Nonvolatile Memory with IGZO Oxide Semiconductor and LiCoO x Charge Trap & Ion Supplying Layer with Large Memory Window B Jeong, J Han, T Noh, TS Yoon | | |
