| Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2 X Wang, SY Kim, RM Wallace ACS Applied Materials & Interfaces 13 (13), 15802-15810, 2021 | 37 | 2021 |
| In situ exfoliated 2D molybdenum disulfide analyzed by XPS X Wang, CR Cormier, A Khosravi, CM Smyth, JR Shallenberger, R Addou, ... Surface Science Spectra 27 (1), 2020 | 30 | 2020 |
| Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace ACS nano 17 (20), 20353-20365, 2023 | 15 | 2023 |
| Band alignment of indium–gallium–zinc oxide/β-Ga2O3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy YW Huan, XL Wang, WJ Liu, H Dong, SB Long, SM Sun, JG Yang, SD Wu, ... Japanese Journal of Applied Physics 57 (10), 100312, 2018 | 12 | 2018 |
| Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang, C Shen, H Wang, ... ACS nano 18 (33), 22444–22453, 2024 | 10 | 2024 |
| The band structure change of Hf0. 5Zr0. 5O2/Ge system upon post deposition annealing Z Feng, Y Peng, H Liu, Y Sun, Y Wang, M Meng, H Liu, J Wang, R Wu, ... Applied Surface Science 488, 778-782, 2019 | 10 | 2019 |
| Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy X Shi, X Wang, Y Sun, C Liu, WH Wang, Y Cheng, W Wang, J Wang, ... Applied Surface Science 425, 932-940, 2017 | 10 | 2017 |
| Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing X Wang, X Qin, W Wang, Y Liu, X Shi, Y Sun, C Liu, J Zhao, G Zhang, ... Applied Surface Science 443, 567-574, 2018 | 8 | 2018 |
| Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance R Hawkins, X Wang, N Moumen, RM Wallace, CD Young Journal of Vacuum Science & Technology A 41 (2), 2023 | 6 | 2023 |
| Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide X Wang, Y Hu, SY Kim, K Cho, RM Wallace ACS Applied Materials & Interfaces 16 (10), 13258–13266, 2024 | 5 | 2024 |
| Inhibitory property of lithium phosphorus oxynitride surface grown by atomic layer deposition Y Wang, Z Feng, X Wang, M Meng, Y Sun, M Jing, H Liu, F Lu, W Wang, ... Surfaces and Interfaces 33, 102280, 2022 | 5 | 2022 |
| Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin–Orbit Torque A Vera, B Zheng, W Yanez, K Yang, SY Kim, X Wang, JC Kotsakidis, ... ACS nano 18 (33), 21985–21997, 2024 | 4 | 2024 |
| 2D topological insulator bismuth selenide analyzed by in situ XPS X Wang, CM Smyth, A Khosravi, CR Cormier, JR Shallenberger, R Addou, ... Surface Science Spectra 26 (2), 2019 | 3 | 2019 |
| Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing Y Zhu, X Wang, C Liu, T Wang, H Chen, WH Wang, Y Cheng, W Wang, ... Surfaces and Interfaces 9, 51-57, 2017 | 3 | 2017 |
| Thermal Stability Study of GaP/High‐k Dielectrics Interfaces X Wang, Y Zhao, R Huang, F Li, X Lu, Z Huang, Y Shen, H Wang, D Shao, ... Advanced Materials Interfaces 4 (20), 1700609, 2017 | 3 | 2017 |
| Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2 SY Kim, Z Sun, J Roy, X Wang, Z Chen, J Appenzeller, RM Wallace ACS Applied Materials & Interfaces, 2024 | 1 | 2024 |
| The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing Y Sun, J Chen, T Wang, X Wang, Z Feng, C Liu, J Zhao, F Lu, Y Cheng, ... Vacuum 168, 108815, 2019 | | 2019 |
Robert M. WallaceUniversity of Texas at DallasПодтвержден адрес электронной почты в домене utdallas.edu