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Journal of Applied Physics 112 (10), 2012
309 2012 Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids J Zhou, G Han, Q Li, Y Peng, X Lu, C Zhang, J Zhang, QQ Sun, DW Zhang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2016
183 2016 Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures L Huang, Q Feng, G Han, F Li, X Li, L Fang, X Xing, J Zhang, Y Hao
IEEE Photonics Journal 9 (4), 1-8, 2017
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IEEE Electron Device Letters 30 (9), 981-983, 2009
125 2009 Negative differential resistance in negative capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao
IEEE Electron Device Letters 39 (4), 622-625, 2018
121 2018 High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 C process modules G Han, S Su, C Zhan, Q Zhou, Y Yang, L Wang, P Guo, W Wei, CP Wong, ...
2011 International Electron Devices Meeting, 16.7. 1-16.7. 3, 2011
111 2011 High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces C Fang, Q Yang, Q Yuan, X Gan, J Zhao, Y Shao, Y Liu, G Han, Y Hao
Opto-Electronic Advances 4 (6), 200030-1-200030-10, 2021
110 2021 Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE Electron Device Letters 34 (3), 339-341, 2013
108 2013 Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ...
Science China Information Sciences 64 (10), 201401, 2021
105 2021 (AlGa)2 O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity Q Feng, X Li, G Han, L Huang, F Li, W Tang, J Zhang, Y Hao
Optical Materials Express 7 (4), 1240-1248, 2017
102 2017 Computing primitive of fully VCSEL-based all-optical spiking neural network for supervised learning and pattern classification S Xiang, Z Ren, Z Song, Y Zhang, X Guo, G Han, Y Hao
IEEE transactions on neural networks and learning systems 32 (6), 2494-2505, 2020
99 2020 Relaxed and strained patterned germanium-tin structures: a Raman scattering study R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo
ECS Journal of Solid State Science and Technology 2 (4), P138, 2013
96 2013 A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5 Zr0.5 O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ...
Advanced Electronic Materials 6 (6), 2000057, 2020
94 2020 Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao
IEEE Electron Device Letters 38 (8), 1157-1160, 2017
85 2017 Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate G Han, P Guo, Y Yang, C Zhan, Q Zhou, YC Yeo
Applied Physics Letters 98 (15), 2011
83 2011 First Demonstration of Waferscale Heterogeneous Integration of Ga2 O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process W Xu, Y Wang, T You, X Ou, G Han, H Hu, S Zhang, F Mu, T Suga, ...
2019 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2019
82 2019 Comparison Study of2 O3 Photodetectors on Bulk Substrate and Sapphire Q Feng, L Huang, G Han, F Li, X Li, L Fang, X Xing, J Zhang, W Mu, Z Jia, ...
IEEE Transactions on Electron Devices 63 (9), 3578-3583, 2016
76 2016 Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing ZD Luo, S Zhang, Y Liu, D Zhang, X Gan, J Seidel, Y Liu, G Han, M Alexe, ...
ACS nano 16 (2), 3362-3372, 2022
72 2022 Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn) Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012
72 2012 Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx J Zhou, Y Peng, G Han, Q Li, Y Liu, J Zhang, M Liao, QQ Sun, DW Zhang, ...
IEEE Journal of the Electron Devices Society 6, 41-48, 2017
69 2017 