| Overcoming the limitations of sputtered nickel oxide for high‐efficiency and large‐area perovskite solar cells G Li, Y Jiang, S Deng, A Tam, P Xu, M Wong, HS Kwok Advanced Science 4 (12), 1700463, 2017 | 229 | 2017 |
| Complex oxides for brain‐inspired computing: A review TJ Park, S Deng, S Manna, ANMN Islam, H Yu, Y Yuan, DD Fong, ... Advanced Materials 35 (37), 2203352, 2023 | 46 | 2023 |
| Multifunctional optoelectronic device based on an asymmetric active layer structure B Ren, G Yuen, S Deng, L Jiang, D Zhou, L Gu, P Xu, M Zhang, Z Fan, ... Advanced Functional Materials 29 (17), 1807894, 2019 | 45 | 2019 |
| Voltage‐dependent multicolor electroluminescent device based on halide perovskite and chalcogenide quantum‐dots emitters J Zhang, B Ren, S Deng, J Huang, L Jiang, D Zhou, X Zhang, M Zhang, ... Advanced Functional Materials 30 (4), 1907074, 2020 | 40 | 2020 |
| Investigation of high-performance ITO-stabilized ZnO TFTs with hybrid-phase microstructural channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok IEEE Transactions on Electron Devices 64 (8), 3174-3182, 2017 | 40 | 2017 |
| Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering W Zhong, S Deng, K Wang, G Li, G Li, R Chen, HS Kwok Nanomaterials 8 (8), 590, 2018 | 36 | 2018 |
| High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels S Deng, R Chen, G Li, Z Xia, M Zhang, W Zhou, M Wong, HS Kwok Applied Physics Letters 109 (18), 2016 | 34 | 2016 |
| Selective area doping for Mott neuromorphic electronics S Deng, H Yu, TJ Park, ANMN Islam, S Manna, A Pofelski, Q Wang, Y Zhu, ... Science Advances 9 (11), eade4838, 2023 | 33 | 2023 |
| Characteristics of elevated-metal metal-oxide thin-film transistors based on indium-tin-zinc oxide Z Xia, L Lu, J Li, Z Feng, S Deng, S Wang, HS Kwok, M Wong IEEE Electron Device Letters 38 (7), 894-897, 2017 | 27 | 2017 |
| Introducing ion migration and light-induced secondary ion redistribution for phase-stable and high-efficiency inorganic perovskite solar cells J Huang, H Yan, D Zhou, J Zhang, S Deng, P Xu, R Chen, HS Kwok, G Li ACS Applied Materials & Interfaces 12 (36), 40364-40371, 2020 | 24 | 2020 |
| Evaluation of positive-bias-stress-induced degradation in InSnZnO thin-film transistors by low frequency noise measurement Z Jiang, M Zhang, S Deng, Y Yang, M Wong, HS Kwok IEEE Electron Device Letters 43 (6), 886-889, 2022 | 22 | 2022 |
| Achieving high open‐circuit voltage for p‐i‐n perovskite solar cells Via anode contact engineering G Li, S Deng, M Zhang, R Chen, P Xu, M Wong, HS Kwok Solar Rrl 2 (10), 1800151, 2018 | 22 | 2018 |
| Low leakage current vertical thin-film transistors with InSnO-stabilized ZnO channel X Yin, S Deng, G Li, W Zhong, R Chen, G Li, FSY Yeung, M Wong, ... IEEE Electron Device Letters 41 (2), 248-251, 2019 | 20 | 2019 |
| Threshold voltage adjustment in hybrid-microstructural ITO-stabilized ZnO TFTs via gate electrode engineering S Deng, R Chen, G Li, M Zhang, Z Xia, M Wong, HS Kwok IEEE Electron Device Letters 39 (7), 975-978, 2018 | 19 | 2018 |
| Low-frequency noise in hybrid-phase-microstructure ITO-stabilized ZnO thin-film transistors Y Liu, S Deng, R Chen, B Li, YF En, Y Chen IEEE Electron Device Letters 39 (2), 200-203, 2017 | 19 | 2017 |
| Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors W Zhong, L Kang, S Deng, L Lu, R Yao, L Lan, HS Kwok, R Chen IEEE Transactions on Electron Devices 68 (10), 4956-4961, 2021 | 16 | 2021 |
| Effect of moisture exchange caused by low‐temperature annealing on device characteristics and instability in InSnZnO thin‐film transistors Z Chen, M Zhang, S Deng, Z Jiang, Y Yan, S Han, Y Zhou, M Wong, ... Advanced Materials Interfaces 9 (14), 2102584, 2022 | 14 | 2022 |
| A high‐performance photodetector based on 1D perovskite radial heterostructure J Zhang, W Zhong, Y Liu, J Huang, S Deng, M Zhang, HS Kwok, G Li Advanced Optical Materials 9 (24), 2101504, 2021 | 14 | 2021 |
| A high gain low-noise amplifier based on ITO-stabilized ZnO thin-film transistors H Fan, G Li, S Deng, Y Xu, Y Qin, Y Liu, SYF Yeung, M Wong, HS Kwok, ... IEEE Transactions on Electron Devices 67 (12), 5537-5543, 2020 | 14 | 2020 |
| Low-power design for unipolar ITO-stabilized ZnO TFT RFID code generator using differential logic decoder Y Qin, G Li, Y Xu, R Chen, S Deng, W Zhong, Z Wu, B Li, G Li, FSY Yeung, ... IEEE Transactions on Electron Devices 66 (11), 4768-4773, 2019 | 14 | 2019 |
HS KwokHong Kong University of Science and TechnologyПодтвержден адрес электронной почты в домене ust.hk