Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient Z Zheng, Y Zhang, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ...
Nature communications 12 (1), 4555, 2021
172 2021 Ferrimagnets for spintronic devices: From materials to applications Y Zhang, X Feng, Z Zheng, Z Zhang, K Lin, X Sun, G Wang, J Wang, J Wei, ...
Applied Physics Reviews 10 (1), 2023
67 2023 Time-domain computing in memory using spintronics for energy-efficient convolutional neural network Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021
62 2021 Skyrmion-based ultra-low power electric-field-controlled reconfigurable (SUPER) logic gate Z Zhang, Y Zhu, Y Zhang, K Zhang, J Nan, Z Zheng, Y Zhang, W Zhao
IEEE Electron Device Letters 40 (12), 1984-1987, 2019
61 2019 Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure G Wang, Y Zhang, J Wang, Z Zhang, K Zhang, Z Zheng, JO Klein, ...
IEEE Transactions on Electron Devices 66 (5), 2431-2436, 2019
58 2019 Enhanced Spin-Orbit Torque and Multilevel Current-Induced Switching in Z Zheng, Y Zhang, X Feng, K Zhang, J Nan, Z Zhang, G Wang, J Wang, ...
Physical Review Applied 12 (4), 044032, 2019
56 2019 Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ...
Nature Electronics 6 (6), 425-433, 2023
49 2023 Ultra-dense ring-shaped racetrack memory cache design G Wang, Y Zhang, B Zhang, B Wu, J Nan, X Zhang, Z Zhang, JO Klein, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (1), 215-225, 2018
40 2018 A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, K Lin, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4247-4258, 2020
36 2020 Domain-Wall Motion Driven by Laplace Pressure in Y Zhang, X Zhang, N Vernier, Z Zhang, G Agnus, JR Coudevylle, X Lin, ...
Physical Review Applied 9 (6), 064027, 2018
31 2018 Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3 Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ...
Chinese Physics B 29 (7), 078505, 2020
30 2020 Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ...
IEEE Electron Device Letters 41 (6), 928-931, 2020
28 2020 Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers K Zhang, L Chen, Y Zhang, B Hong, Y He, K Lin, Z Zhang, Z Zheng, ...
Applied Physics Reviews 9 (1), 2022
26 2022 Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions Y Zhang, X Zhang, J Hu, J Nan, Z Zheng, Z Zhang, Y Zhang, N Vernier, ...
Scientific Reports 6 (1), 35062, 2016
25 2016 Magnon scattering modulated by omnidirectional hopfion motion in antiferromagnets for meta-learning Z Zhang, K Lin, Y Zhang, A Bournel, K Xia, M Kläui, W Zhao
Science advances 9 (6), eade7439, 2023
24 2023 Perspectives of racetrack memory for large-capacity on-chip memory: From device to system Y Zhang, C Zhang, J Nan, Z Zhang, X Zhang, JO Klein, D Ravelosona, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (5), 629-638, 2016
24 2016 Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
19 2017 Large magnetoresistance and 15 boolean logic functions based on a ZnCoO film and diode combined device K Zhang, Y Zhang, Z Zhang, Z Zheng, G Wang, Y Zhang, Q Liu, S Yan, ...
Advanced Electronic Materials 5 (3), 1800812, 2019
18 2019 3D ferrimagnetic device for multi-bit storage and efficient in-memory computing Z Zhang, Z Zheng, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ...
IEEE Electron Device Letters 42 (2), 152-155, 2020
14 2020 Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets Z Zheng, Y Gu, Z Zhang, X Zhang, T Zhao, H Li, L Ren, L Jia, R Xiao, ...
Nano Letters 23 (14), 6378-6385, 2023
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