Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ...
ACS nano 11 (2), 1588-1596, 2017
869 2017 A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2 –Metal Junction Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ...
Advanced Materials 31 (25), 1808231, 2019
232 2019 Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
197 2017 Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo
2D Materials 8 (1), 012002, 2020
179 2020 Adlayer‐free large‐area single crystal graphene grown on a Cu (111) foil D Luo, M Wang, Y Li, C Kim, KM Yu, Y Kim, H Han, M Biswal, M Huang, ...
Advanced Materials 31 (35), 1903615, 2019
141 2019 High‐Electric‐Field‐Induced Phase Transition and Electrical Breakdown of MoTe2 C Kim, S Issarapanacheewin, I Moon, KY Lee, C Ra, S Lee, Z Yang, ...
Advanced Electronic Materials 6 (3), 1900964, 2020
47 2020 The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ...
Nanoscale 11 (37), 17368-17375, 2019
41 2019 Ohmic contact in 2D semiconductors via the formation of a benzyl viologen interlayer D Yue, C Kim, KY Lee, WJ Yoo
Advanced Functional Materials 29 (7), 1807338, 2019
33 2019 Metallic contact induced van der Waals gap in a MoS 2 FET C Kim, KY Lee, I Moon, S Issarapanacheewin, WJ Yoo
Nanoscale 11 (39), 18246-18254, 2019
19 2019 Fermi level pinning of Monolayer Molybdenum Dichalcogenides. C Kim, I Moon, MS Choi, F Ahmed, X Liu, WJ Yoo
APS March Meeting Abstracts 2017, B32. 013, 2017
1 2017 Effects of plasma treatment on surface properties of 2D tungsten diselenide I Moon, S Lee, D Qu, C Kim, WJ Yoo
APS March Meeting Abstracts 2018, Y37. 007, 2018
2018 Fermi level de-pinning by using one-dimensional edge contact to MoS2 C Kim, I Moon, K Lee, WJ Yoo
APS March Meeting Abstracts 2018, L37. 002, 2018
2018 Tunneling in BP-MoS X Liu, D Qu, C Kim, F Ahmed
Bulletin of the American Physical Society 62, 2017
2017 Tunneling in BP-MoS2 heterostructure X Liu, D Qu, C Kim, F Ahmed, WJ Yoo
APS March Meeting Abstracts 2017, C32. 004, 2017
2017 Measurements of Schottky barrier heights formed from metals and 2D transition metal dichalcogedides C Kim, I Moon, S Nam, Y Cho, HJ Shin, S Park, WJ Yoo
APS March Meeting Abstracts 2016, R16. 009, 2016
2016 Fermi Level Pinning at the Interface of Molybdenum Based Chalcogenides and Metals I Moon, C Kim, S Nam, Y Cho, HJ Shin, S Park, WJ Yoo
APS March Meeting Abstracts 2016, R16. 010, 2016
2016 Lateral MoS2 p-n junctions formed by chemical doping method WJ Yoo, MS Choi, D Qu, D Lee, X Liu, Y Jang, C Kim, J Ryu
APS March Meeting Abstracts 2015, H1. 240, 2015
2015 
Won Jong YooProfessor of Sungkyunkwan UniversityПодтвержден адрес электронной почты в домене skku.edu