Antiferromagnetic spintronics: An overview and outlook D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu, K Cao, S Peng, ...
Fundamental Research 2 (4), 522-534, 2022
102 2022 Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature S Li, A Du, Y Wang, X Wang, X Zhang, H Cheng, W Cai, S Lu, K Cao, ...
Science Bulletin 67 (7), 691-699, 2022
84 2022 Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ...
Nature Electronics 6 (6), 425-433, 2023
49 2023 Sign Change of Spin-Orbit Torque in D Zhu, T Zhang, X Fu, R Hao, A Hamzić, H Yang, X Zhang, H Zhang, A Du, ...
Physical review letters 128 (21), 217702, 2022
25 2022 Manipulating density of magnetic skyrmions via multilayer repetition and thermal annealing X Wang, A Cao, S Li, J Tang, A Du, H Cheng, Y Sun, H Du, X Zhang, ...
Physical Review B 104 (6), 064421, 2021
21 2021 Observation of magnetic droplets in magnetic tunnel junctions K Shi, W Cai, S Jiang, D Zhu, K Cao, Z Guo, J Wei, A Du, Z Li, Y Huang, ...
Science China Physics, Mechanics & Astronomy 65 (2), 227511, 2022
16 2022 First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias DQ Zhu, ZX Guo, A Du, DR Xiong, R Xiao, WL Cai, KW Shi, SZ Peng, ...
2021 IEEE International Electron Devices Meeting (IEDM), 17.5. 1-17.5. 4, 2021
15 2021 Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction Y Zhuo, W Cai, D Zhu, H Zhang, A Du, K Cao, J Yin, Y Huang, K Shi, ...
Science China Physics, Mechanics & Astronomy 65 (10), 107511, 2022
13 2022 Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions B Wang, Z Wang, A Du, Y Qiang, K Cao, Y Zhao, H Zheng, S Yan, P Zhai, ...
Applied Physics Letters 116 (17), 2020
13 2020 Scalable Ising computer based on ultra-fast field-free spin orbit torque stochastic device with extreme 1-bit quantization J Yin, Y Liu, B Zhang, A Du, T Gao, X Ma, Y Dong, Y Bai, S Lu, Y Zhuo, ...
2022 International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2022
8 2022 Angular dependent auto-oscillations by spin-transfer and spin-orbit torques in three-terminal magnetic tunnel junctions W Cai, A Kumar, A Du, K Shi, R Xiao, K Cao, J Yin, J Åkerman, W Zhao
IEEE Electron Device Letters 44 (5), 861-864, 2023
6 2023 Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling Y Zhang, W Sun, K Cao, XX Yang, Y Yang, S Lu, A Du, C Hu, C Feng, ...
Science Advances 10 (16), eadl4633, 2024
3 2024 Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers W Sun, Y Zhang, K Cao, S Lu, A Du, H Huang, S Zhang, C Hu, C Feng, ...
Science Advances 10 (14), eadj8379, 2024
3 2024 High repetition granular Co/Pt multilayers with improved perpendicular remanent magnetization for high-density magnetic recording Z Li, K Zhang, A Du, H Zhang, W Chen, N Xu, R Hao, S Yan, W Zhao, ...
Chinese Physics B 32 (2), 026803, 2023
3 2023 Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque A Du, D Zhu, Z Peng, Z Guo, M Wang, K Shi, K Cao, C Zhao, W Zhao
Advanced Electronic Materials, 2300779, 2024
2 2024 Antiferromagnetic Spintronics in Magnetic Memory Devices W Qi, H Zhang, L Chen, A Du, D Zheng, Y Xiao, D Tian, F Hu, B Shen, ...
IEEE Transactions on Materials for Electron Devices, 2024
1 2024 Compact leak-integrate-fire neuron with auto-reset functionality based on a single spin–orbit torque magnetic tunnel junction device S Wang, R Chen, C Wang, W Cai, D Zhu, A Du, Z Wang, Z Chen, K Shi, ...
Applied Physics Letters 124 (13), 2024
1 2024 Experimental Realization of Physical Unclonable Function Chip Utilizing Spintronic Memories X Zhang, C Jiang, J Yin, D Zhu, S Wang, S Li, Z Zhang, A Du, W Cai, H Liu, ...
Engineering, 2025
2025 Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory Y Huang, K Cao, K Zhang, J Wang, K Shi, Z Hao, W Cai, A Du, J Yin, ...
Science China Information Sciences 66 (6), 162402, 2023
2023 Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir20Mn80 D Xiong, Y Jiang, D Zhu, A Du, Z Guo, S Lu, C Wang, Q Xia, D Zhu, ...
Chinese Physics B 32 (5), 057501, 2023
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