| An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ... Nature communications 11 (1), 51, 2020 | 358 | 2020 |
| A review of resistive switching devices: performance improvement, characterization, and applications T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu Small Structures 2 (4), 2000109, 2021 | 187 | 2021 |
| Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ... Nature communications 12 (1), 7232, 2021 | 161 | 2021 |
| Artificial visual perception nervous system based on low-dimensional material photoelectric memristors Y Pei, L Yan, Z Wu, J Lu, J Zhao, J Chen, Q Liu, X Yan ACS nano 15 (11), 17319-17326, 2021 | 140 | 2021 |
| Oxide‐based electrolyte‐gated transistors for spatiotemporal information processing Y Li, J Lu, D Shang, Q Liu, S Wu, Z Wu, X Zhang, J Yang, Z Wang, H Lv, ... Advanced Materials 32 (47), 2003018, 2020 | 138 | 2020 |
| A habituation sensory nervous system with memristors Z Wu, J Lu, T Shi, X Zhao, X Zhang, Y Yang, F Wu, Y Li, Q Liu, M Liu Advanced Materials 32 (46), 2004398, 2020 | 116 | 2020 |
| A heterogeneously integrated spiking neuron array for multimode‐fused perception and object classification J Zhu, X Zhang, R Wang, M Wang, P Chen, L Cheng, Z Wu, Y Wang, ... Advanced Materials 34 (24), 2200481, 2022 | 97 | 2022 |
| Time‐tailoring van der Waals heterostructures for human memory system programming H Chen, C Liu, Z Wu, Y He, Z Wang, H Zhang, Q Wan, W Hu, DW Zhang, ... Advanced Science 6 (20), 1901072, 2019 | 95 | 2019 |
| Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks X Zhang, J Lu, Z Wang, R Wang, J Wei, T Shi, C Dou, Z Wu, J Zhu, ... Science Bulletin 66 (16), 1624-1633, 2021 | 86 | 2021 |
| One transistor one electrolyte‐gated transistor based spiking neural network for power‐efficient neuromorphic computing system Y Li, Z Xuan, J Lu, Z Wang, X Zhang, Z Wu, Y Wang, H Xu, C Dou, Y Kang, ... Advanced Functional Materials 31 (26), 2100042, 2021 | 86 | 2021 |
| Bipolar analog memristors as artificial synapses for neuromorphic computing R Wang, T Shi, X Zhang, W Wang, J Wei, J Lu, X Zhao, Z Wu, R Cao, ... Materials 11 (11), 2102, 2018 | 74 | 2018 |
| A self-rectification and quasi-linear analogue memristor for artificial neural networks W Wang, R Wang, T Shi, J Wei, R Cao, X Zhao, Z Wu, X Zhang, J Lu, H Xu, ... IEEE Electron Device Letters 40 (9), 1407-1410, 2019 | 61 | 2019 |
| Implementing in-situ self-organizing maps with memristor crossbar arrays for data mining and optimization R Wang, T Shi, X Zhang, J Wei, J Lu, J Zhu, Z Wu, Q Liu, M Liu Nature communications 13 (1), 2289, 2022 | 58 | 2022 |
| Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices Z Wu, X Zhao, Y Yang, W Wang, X Zhang, R Wang, R Cao, Q Liu, ... Nanoscale advances 1 (9), 3753-3760, 2019 | 40 | 2019 |
| Fully memristive SNNs with temporal coding for fast and low-power edge computing X Zhang, Z Wu, J Lu, J Wei, J Lu, J Zhu, J Qiu, R Wang, K Lou, Y Wang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.6. 1-29.6. 4, 2020 | 36 | 2020 |
| A configurable artificial neuron based on a threshold-tunable TiN/NbOₓ/Pt Memristor Y Wang, H Xu, W Wang, X Zhang, Z Wu, R Gu, Q Li, Q Liu IEEE Electron Device Letters 43 (4), 631-634, 2022 | 34 | 2022 |
| A 4T2R RRAM bit cell for highly parallel ternary content addressable memory X Wang, L Wang, Y Wang, J An, C Dou, Z Wu, X Zhang, J Liu, C Zhang, ... IEEE Transactions on Electron Devices 68 (10), 4933-4937, 2021 | 33 | 2021 |
| High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications P Chen, X Zhang, Z Wu, Y Wang, J Zhu, Y Hao, G Feng, Y Sun, T Shi, ... IEEE Transactions on Electron Devices 69 (5), 2391-2397, 2022 | 28 | 2022 |
| Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory X Zhao, X Zhang, D Shang, Z Wu, X Xiao, R Chen, C Tang, J Liu, W Li, ... IEEE Electron Device Letters 40 (4), 554-557, 2019 | 26 | 2019 |
| Implementation of Highly Reliable and Energy Efficient in‐Memory Hamming Distance Computations in 1 Kb 1‐Transistor‐1‐Memristor Arrays H Lin, Z Wu, L Liu, D Wang, X Zhao, L Cheng, Y Lin, Z Wang, X Xu, H Xu, ... Advanced Materials Technologies 6 (12), 2100745, 2021 | 22 | 2021 |
Qi LiuFudan UniversityПодтвержден адрес электронной почты в домене ime.ac.cn