| Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen, G Crupi Engineering Research Express 4 (1), 015030, 2022 | 8 | 2022 |
| Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate S Das, TR Lenka, FA Talukdar, SM Sadaf, RT Velpula, HPT Nguyen Applied Optics 61 (30), 8951-8958, 2022 | 6 | 2022 |
| Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation S Das, TR Lenka, FA Talukdar, RT Velpula, HPT Nguyen Optical and Quantum Electronics 55 (1), 67, 2023 | 5 | 2023 |
| Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen, G Crupi 2021 15th International Conference on Advanced Technologies, Systems and …, 2021 | 5 | 2021 |
| Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence S Das, TR Lenka, FA Talukdar, RT Velpula, HPT Nguyen Facta Universitatis, Series: Electronics and Energetics 36 (1), 091-101, 2023 | 3 | 2023 |
| The role of indium composition in InxGa1− xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence S Das, TR Lenka, FA Talukdar, HPT Nguyen, G Crupi International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023 | 3 | 2023 |
| Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching JD McNamara, KL Phumisithikul, AA Baski, J Marini, ... Journal of Applied Physics 120 (15), 2016 | 3 | 2016 |
| Performance Enhancement of AlInGaN Quantum Well based UV-LED S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen 2021 IEEE 18th India Council International Conference (INDICON), 1-5, 2021 | 2 | 2021 |
| Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence S Das, TR Lenka, FA Talukdar, HPT Nguyen, G Crupi Micromachines 14 (10), 1926, 2023 | 1 | 2023 |
| High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer S Das, TR Lenka, FA Talukdar, G Nguyen, Crupi, HP Trung Journal of Optoelectronics and Advanced Materials 25 (7-8), 311-320, 2023 | 1 | 2023 |
| Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED S Das, TR Lenka, FA Talukdar, G Crupi, HPT Nguyen 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | 1 | 2022 |
| Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs S Das, TR Lenka, FA Talukdar, RT Velpula, HPT Nguyen, G Crupi 2022 International Conference on Numerical Simulation of Optoelectronic …, 2022 | 1 | 2022 |
| Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology S Das, TR Lenka, FA Talukdar, RT Velpula, HPT Nguyen Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings …, 2022 | 1 | 2022 |
| Thermal droop minimization and simulation of opto-electronic properties in blue InGaN/GaN Ga-polar and N-polar tunnel junction nanowire LEDs S Das, TR Lenka, FA Talukdar, HPT Nguyen Materials Science in Semiconductor Processing 190, 109326, 2025 | | 2025 |
| DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions GP Rao, TR Lenka, S Das, HPT Nguyen 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Deep-UV Nanowire LED with Step-Graded n-Type Electron Blocking Layer and Al₂O₃ Nanoparticles for Enhanced Performance S Das, TR Lenka, FA Talukdar 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency S Das, TR Lenka, FA Talukdar, HPT Nguyen IECON 2023-49th Annual Conference of the IEEE Industrial Electronics Society …, 2023 | | 2023 |
| Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach RT Velpula, B Jain, S Das, TR Lenka, HPT Nguyen Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings …, 2022 | | 2022 |
| Transportation of Bombay High crude from platform to onshore terminal MC Gupta, K Kumar, SR Das Pet. Asia J.;(India) 7 (4), 1985 | | 1985 |
| Thermal Droop Minimization and Enhanced Opto-Electronic Properties in Ingan/Gan Ga-Polar and N-Polar Tunnel Junction Nanowire Leds S Das, TR Lenka, FA Talukdar, HPT Nguyen Gan Ga-Polar and N-Polar Tunnel Junction Nanowire Leds, 0 | | |
Trupti Ranjan LenkaNational Institute of Technology Silchar, Assam, INDIAПодтвержден адрес электронной почты в домене ieee.org