Stranski-Krastanov growth of InAs quantum dots with narrow size distribution KYK Yamaguchi, KYK Yujobo, TKT Kaizu
Japanese journal of applied physics 39 (12A), L1245, 2000
226 2000 Two-step photon up-conversion solar cells S Asahi, H Teranishi, K Kusaki, T Kaizu, T Kita
Nature communications 8 (1), 14962, 2017
120 2017 Two-step photon absorption in InAs/GaAs quantum-dot superlattice solar cells T Kada, S Asahi, T Kaizu, Y Harada, T Kita, R Tamaki, Y Okada, K Miyano
Physical Review B 91 (20), 201303, 2015
49 2015 Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy TKT Kaizu, KYK Yamaguchi
Japanese Journal of Applied Physics 40 (3S), 1885, 2001
49 2001 Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ...
Nanotechnology 24 (28), 285301, 2013
43 2013 Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well … S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
Journal of Applied Physics 116 (6), 2014
37 2014 Saturable Two-Step Photocurrent Generation in Intermediate-Band Solar Cells Including InAs Quantum Dots Embedded in Al S Asahi, H Teranishi, N Kasamatsu, T Kada, T Kaizu, T Kita
IEEE Journal of Photovoltaics 6 (2), 465-472, 2015
35 2015 Uniform formation process of self-organized InAs quantum dots K Yamaguchi, T Kaizu, K Yujobo, Y Saito
Journal of crystal growth 237, 1301-1306, 2002
33 2002 Broadband control of emission wavelength of InAs/GaAs quantum dots by GaAs capping temperature T Kaizu, T Matsumura, T Kita
Journal of Applied Physics 118 (15), 2015
32 2015 Facet formation of uniform InAs quantum dots by molecular beam epitaxy T Kaizu, K Yamaguchi
Japanese journal of applied physics 42 (6S), 4166, 2003
30 2003 In situ monitoring of internal strain and height of InAs nanoislands grown on GaAs (001) M Takahasi, T Kaizu, J Mizuki
Applied physics letters 88 (10), 2006
25 2006 Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth T Kaizu, Y Tamura, M Igarashi, W Hu, R Tsukamoto, I Yamashita, ...
Applied Physics Letters 101 (11), 2012
24 2012 Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots T Kita, M Suwa, T Kaizu, Y Harada
Journal of Applied Physics 115 (23), 2014
23 2014 Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells T Kada, S Asahi, T Kaizu, Y Harada, R Tamaki, Y Okada, T Kita
Scientific Reports 7 (1), 5865, 2017
22 2017 Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure S Asahi, T Kaizu, T Kita
Scientific reports 9 (1), 7859, 2019
17 2019 Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells S Watanabe, S Asahi, T Kada, K Hirao, T Kaizu, Y Harada, T Kita
Applied Physics Letters 110 (19), 2017
17 2017 Modification of InAs quantum dot structure during annealing T Kaizu, M Takahasi, K Yamaguchi
Journal of crystal growth 301, 248-251, 2007
17 2007 Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell T Sogabe, T Kaizu, Y Okada, S Tomić
Journal of Renewable and Sustainable Energy 6 (1), 2014
16 2014 In situ determination of Sb distribution in Sb/GaAs (0 0 1) layer for high-density InAs quantum dot growth T Kaizu, M Takahasi, K Yamaguchi
Journal of crystal growth 310 (15), 3436-3439, 2008
15 2008 Controlled stacking growth of uniform InAs quantum dots by molecular beam epitaxy Y Suzuki, T Kaizu, K Yamaguchi
Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 555-559, 2004
14 2004 