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Yiming Li
Yiming Li
Другие именаY. Li, Yi-Ming Li, 李義明
Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung University
Подтвержден адрес электронной почты в домене nycu.edu.tw - Главная страница
Название
Процитировано
Процитировано
Год
Physics of semiconductor devices
SM Sze, Y Li, KK Ng
John wiley & sons, 2021
710332021
5nm-gate nanowire FinFET
FL Yang, DH Lee, HY Chen, CY Chang, SD Liu, CC Huang, TX Chung, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 196-197, 2004
4502004
3D 65nm CMOS with 320° C microwave dopant activation
YJ Lee, YL Lu, FK Hsueh, KC Huang, CC Wan, TY Cheng, MH Han, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2602009
Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies
Y Li, CH Hwang, TY Li, MH Han
IEEE Transactions on Electron Devices 57 (2), 437-447, 2009
1452009
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
Y Li, HM Chou, JW Lee
IEEE Transactions on Nanotechnology 4 (5), 510-516, 2005
1332005
Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOS
Y Li, SM Yu, JR Hwang, FL Yang
IEEE Transactions on Electron Devices 55 (6), 1449-1455, 2008
1282008
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
Y Li, SM Sze, TS Chao
Engineering with Computers 18 (2), 124-137, 2002
1252002
Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
Y Li, O Voskoboynikov, CP Lee, SM Sze
Computer Physics Communications 141 (1), 66-72, 2001
1122001
Energy states and magnetization in nanoscale quantum rings
O Voskoboynikov, Y Li, HM Lu, CF Shih, CP Lee
Physical Review B 66 (15), 155306, 2002
932002
Random-dopant-induced variability in nano-CMOS devices and digital circuits
Y Li, CH Hwang, TY Li
IEEE Transactions on Electron Devices 56 (8), 1588-1597, 2009
842009
A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs
Y Li, HM Chou
IEEE transactions on nanotechnology 4 (5), 645-647, 2005
842005
Cluster evolution of IC industry from Taiwan to China
BH Tsai, Y Li
Technological Forecasting and Social Change 76 (8), 1092-1104, 2009
832009
Discrete-dopant-induced characteristic fluctuations in multiple-gate silicon-on-insulator devices
Y Li, CH Hwang
Journal of Applied Physics 102 (8), 084509, 2007
752007
Electron energy state dependence on the shape and size of semiconductor quantum dots
Y Li, O Voskoboynikov, CP Lee, SM Sze, O Tretyak
Journal of Applied Physics 90 (12), 6416-6420, 2001
712001
Discretization scheme for the density-gradient equation and effect of boundary conditions
TW Tang, X Wang, Y Li
Journal of Computational Electronics 1 (3), 389-393, 2002
702002
Comparison of random-dopant-induced threshold voltage fluctuation in nanoscale single-, double-, and surrounding-gate field-effect transistors
Y Li, SM Yu
Japanese journal of applied physics 45 (9R), 6860, 2006
682006
Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices
Y Li, HT Chang, CN Lai, PJ Chao, CY Chen
2015 IEEE International Electron Devices Meeting (IEDM), 34.4. 1-34.4. 4, 2015
672015
High-frequency characteristic fluctuations of nano-MOSFET circuit induced by random dopants
Y Li, CH Hwang
IEEE Transactions on Microwave Theory and Techniques 56 (12), 2726-2733, 2008
672008
Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs
Y Li, CH Hwang
IEEE transactions on electron devices 54 (12), 3426-3429, 2007
662007
Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer
NM Shrestha, Y Li, EY Chang
Japanese Journal of Applied Physics 53 (4S), 04EF08, 2014
622014
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