Many-electron multiplet effects in the spectra of impurities in heteropolar semiconductors A Fazzio, MJ Caldas, A Zunger
Physical Review B 30 (6), 3430, 1984
355 1984 A universal trend in the binding energies of deep impurities in semiconductors MJ Caldas, A Fazzio, A Zunger
Applied Physics Letters 45 (6), 671-673, 1984
331 1984 Electronic structure of copper, silver, and gold impurities in silicon A Fazzio, MJ Caldas, A Zunger
Physical Review B 32 (2), 934, 1985
102 1985 Anion-antisite-like defects in III-V compounds MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
73 1990 Separation of one- and many-electron effects in the excitation spectra of impurities in semiconductors A Fazzio, M Caldas, A Zunger
Physical Review B 29 (10), 5999, 1984
54 1984 Theoretical investigation of the electrical and optical activity of vanadium in GaAs MJ Caldas, SK Figueiredo, A Fazzio
Physical Review B 33 (10), 7102, 1986
40 1986 Theoretical Study of the Si‐A Centre MJ Caldas, JR Leite, A Fazzio
physica status solidi (b) 98 (2), K109-K111, 1980
19 1980 Point defects in covalent semiconductors: A molecular cluster model A Fazzio, MJ Caldas, JR Leite
International Journal of Quantum Chemistry 16 (S13), 349-361, 1979
19 1979 Germanium negative-U center in GaAs TM Schmidt, A Fazzio, MJ Caldas
Physical Review B 53 (3), 1315, 1996
15 1996 Multiple-scattering molecular-cluster model of complex defects in semiconductors: Application to Si: and Si: systems MJ Caldas, JR Leite, A Fazzio
Physical Review B 25 (4), 2603, 1982
14 1982 A molecular cluster study of complex defects in Si: The divacancy and the E center A Fazzio, JR Leite, MJ Caldas
Physica B+ C 116 (1-3), 90-94, 1983
13 1983 Electronic Structure of Interfaces between Thiophene and TiO2 Nanostructures M Alves-Santos, LMM Jorge, MJ Caldas, D Varsano
The Journal of Physical Chemistry C 118 (25), 13539-13544, 2014
11 2014 Defect-molecule parameters for the divacancy in silicon VMS Gomes, LVC Assali, JR Leite, A Fazzio, MJ Caldas
Solid state communications 53 (10), 841-844, 1985
9 1985 Electronic structure calculation of V2+ O2 complexes in silicon VMS Gomes, LVC Assali, JR Leite, MJ Caldas, A Fazzio
Solid state communications 49 (6), 537-539, 1984
9 1984 Correlation effects in native defects in GaAs MJ Caldas, A Fazzio
Materials Science Forum 38, 119-124, 1989
6 1989 Electronic structure of oxygen in silicon MJ Caldas, JR Leite, A Fazzio
Physica B+ C 116 (1-3), 106-111, 1983
6 1983 Reyes, & Heras, A.(2017) M Caldas
Empresa e iniciativa emprendedora. Bogotá: Editex, 0
5 Trends in the Metastability of DX-Centers TM Schmidt, A Fazzio, MJ Caldas
Materials Science Forum 196, 273-278, 1995
4 1995 Concavity effects on the optical properties of aromatic hydrocarbons C Cocchi, D Prezzi, A Ruini, MJ Caldas, A Fasolino, E Molinari
The Journal of Physical Chemistry C 117 (24), 12909-12915, 2013
3 2013 Anion–Antisite defects in GaAs: As and Sb MJ Caldas, A Fazzio, J Dabrowski, M Scheffler
International Journal of Quantum Chemistry 38 (S24), 563-567, 1990
3 1990