3D 65nm CMOS with 320° C microwave dopant activation YJ Lee, YL Lu, FK Hsueh, KC Huang, CC Wan, TY Cheng, MH Han, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
260 2009 Gate-all-around junctionless transistors with heavily doped polysilicon nanowire channels CJ Su, TI Tsai, YL Liou, ZM Lin, HC Lin, TS Chao
IEEE Electron Device Letters 32 (4), 521-523, 2011
234 2011 Simultaneous activation and crystallization by low-temperature microwave annealing for improved quality of amorphous silicon thin-film transistors YL Lu, YJ Lee, TS Chao
ECS Solid State Letters 1 (1), P1, 2012
128 2012 A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation Y Li, SM Sze, TS Chao
Engineering with Computers 18, 124-137, 2002
125 2002 Nanometer-scale conversion of FSS Chien, JW Chang, SW Lin, YC Chou, TT Chen, S Gwo, TS Chao, ...
Applied Physics Letters 76 (3), 360-362, 2000
124 2000 Local electric-field-induced oxidation of titanium nitride films S Gwo, CL Yeh, PF Chen, YC Chou, TT Chen, TS Chao, SF Hu, ...
Applied physics letters 74 (8), 1090-1092, 1999
102 1999 Improving radiation hardness of EEPROM/flash cell by N 2 O annealing T Huang, FC Jong, TS Chao, HC Lin, LY Leu, K Young, CH Lin, KY Chin
IEEE Electron Device Letters 19 (7), 256-258, 1998
88 1998 Low-temperature microwave annealing processes for future IC fabrication—A review YJ Lee, TC Cho, SS Chuang, FK Hsueh, YL Lu, PJ Sung, HC Chen, ...
IEEE Transactions on electron devices 61 (3), 651-665, 2014
83 2014 Nano-oxidation of silicon nitride films with an atomic force microscope: chemical mapping, kinetics, and applications FSS Chien, YC Chou, TT Chen, WF Hsieh, TS Chao, S Gwo
Journal of Applied Physics 89 (4), 2465-2472, 2001
80 2001 High-k cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films TM Pan, TF Lei, TS Chao
Applied Physics Letters 78 (10), 1439-1441, 2001
78 2001 High Quality Ultrathin CoTiO3 High‐k Gate Dielectrics TM Pan, TF Lei, TS Chao, KL Chang, KC Hsieh
Electrochemical and Solid-State Letters 3 (9), 433, 2000
77 2000 Improvement of junction leakage of nickel silicided junction by a Ti-capping layer TH Hou, TF Lei, TS Chao
IEEE Electron Device Letters 20 (11), 572-573, 1999
70 1999 First demonstration of CMOS inverter and 6T-SRAM based on GAA CFETs structure for 3D-IC applications SW Chang, PJ Sung, TY Chu, DD Lu, CJ Wang, NC Lin, CJ Su, SH Lo, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.7. 1-11.7. 4, 2019
60 2019 Reliability Mechanisms of LTPS-TFT With MW Ma, CY Chen, WC Wu, CJ Su, KH Kao, TS Chao, TF Lei
IEEE transactions on electron devices 55 (5), 1153-1160, 2008
56 2008 IEEE Trans. Electron Devices MS Liang
IEEE Trans. Electron Devices 31, 1238-1244, 1984
55 1984 Fabrication and Characterization of High‐k Dielectric Nickel Titanate Thin Films Using a Modified Sol–Gel Method SH Chuang, ML Hsieh, SC Wu, HC Lin, TS Chao, TH Hou
Journal of the American ceramic society 94 (1), 250-254, 2011
54 2011 Process for suppressing boron penetration in BF2+-implanted P+-poly-Si gate using inductively-coupled nitrogen plasma TS Chao, CH Chu
US Patent 5,629,221, 1997
54 1997 A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing YJ Lee, TC Cho, KH Kao, PJ Sung, FK Hsueh, PC Huang, CT Wu, SH Hsu, ...
2014 IEEE international Electron devices meeting, 32.7. 1-32.7. 4, 2014
51 2014 Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory WC Wu, TS Chao, WC Peng, WL Yang, JC Wang, JH Chen, CS Lai, ...
IEEE Electron Device Letters 28 (3), 214-216, 2007
51 2007 A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs T Wang, LP Chiang, NK Zous, CF Hsu, LY Huang, TS Chao
IEEE Transactions on Electron Devices 46 (9), 1877-1882, 1999
51 1999 
Shangjr (Felix) GwoNational Tsing-Hua UniversityПодтвержден адрес электронной почты в домене phys.nthu.edu.tw
