Общедоступные статьи - Tien Sheng ChaoПодробнее...
2 статьи недоступны нигде
Integration design and process of 3-D heterogeneous 6T SRAM with double layer transferred Ge/2Si CFET and IGZO pass gates for 42% reduced cell size
XR Yu, MH Chuang, SW Chang, WH Chang, TC Hong, CH Chiang, ...
2022 International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2022
Финансирование: Japan Science and Technology Agency
First demonstration of vertical stacked hetero-oriented n-Ge (111)/p-Ge (100) CFET toward mobility balance engineering
XR Yu, WH Chang, TC Hong, PJ Sung, A Agarwal, GL Luo, CT Wu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
Финансирование: Japan Science and Technology Agency
2 статьи доступны в некоторых источниках
Ti supersaturated Si by microwave annealing processes
J Olea, G González-Díaz, D Pastor, E García-Hemme, D Caudevilla, ...
Semiconductor Science and Technology 38 (2), 024004, 2023
Финансирование: Government of Spain
Ti supersaturated Si by microwave annealing processes
J Olea Ariza, G González Díaz, D Pastor Pastor, E García Hemme, ...
IOP Publishing, 2023
Финансирование: Government of Spain
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