Energy spectrum and topology evolution of the Fermi surface of two-dimensional holes in GaAs/Al 0.5 Ga 0.5 As heterostructures under uniaxial compression: Theory and experiment KI Kolokolov, AM Savin, SD Beneslavski, NY Minina, OP Hansen
Physical Review B 59 (11), 7537, 1999
81 1999 KI Kolokolov, J Li, CZ Ning
Physical Review B 68 (16), 161308, 2003
61 2003 Temperature dependence of intersubband transitions in InAs/AlSb quantum wells DC Larrabee, GA Khodaparast, J Kono, K Ueda, Y Nakajima, M Nakai, ...
Applied Physics Letters 83 (19), 3936-3938, 2003
58 2003 Far-infrared intersubband absorption in p-type G a A s/A l x Ga 1− x As single heterojunctions under uniaxial compression KI Kolokolov, SD Beneslavski, NY Minina, AM Savin
Physical Review B 63 (19), 195308, 2001
24 2001 TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression KIKNYM EV Bogdanov, H Kissel
Semiconductor Science and Technology 31 (3), 035008, 2016
15 2016 Intersubband transitions in InAs/AlSb quantum wells J Li, K Koloklov, CZ Ning, DC Larraber, GA Khodaparast, J Kono, K Ueda, ...
MRS Fall Meeting, 2003
12 2003 Electroluminescence and band structure in p-Al x Ga1− x As/GaAs1− y P y/n-Al x Ga1− x As under uniaxial compression EV Andreev, EV Bogdanov, H Kissel, KI Kolokolov, NY Minina, ...
High Pressure Research 29 (4), 495-499, 2009
9 2009 Microscopic modeling of intersubband resonances in InAs/AlSb quantum wells J Li, KI Kolokolov, CZ Ning, DC Larrabee, GA Khodaparast, J Kono, ...
Physica E: Low-dimensional Systems and Nanostructures 20 (3-4), 268-271, 2004
8 2004 Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress EV Bogdanov, KI Kolokolov, NV Melnikova, NY Minina, GV Tikhomirova
Journal of Physics: Conference Series 950 (4), 042047, 2017
6 2017 Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells KI Kolokolov, CZ Ning
Applied physics letters 83 (8), 1581-1583, 2003
6 2003 Progress in Semiconductors II: Electronic and Optoelectronic Applications J Li, KI Kolokolov, CZ Ning, DC Larrabee, GA Khodaparast, J Kono, ...
MRS Proceedings 744, 571, 2003
6 2003 Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k· p Model C Wang, W Pan, K Kolokolov, S Wang
Chinese Physics Letters 35 (5), 057801, 2018
4 2018 Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at GaAs/AlxGa1− xAs heterointerface under uniaxial stress NY Minina, KI Kolokolov, SD Beneslavski, EV Bogdanov, AV Polyanskiy, ...
Physica E: Low-dimensional Systems and Nanostructures 22 (1-3), 373-376, 2004
4 2004 Spurious states free solutions of the k· p Hamiltonian for heterostructures KI Kolokolov, J Li, CZ Ning
Physics and Simulation of Optoelectronic Devices XI 4986, 265-272, 2003
3 2003 Intersubband transitions in narrow InAs/AlSb quantum wells DC Larrabee, J Tang, M Liang, GA Khodaparast, J Kono, K Ueda, ...
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 324-333, 2002
3 2002 Effect of external uniaxial stress on the electronic properties and symmetry of p-GaAs/AlxGa1− xAs quantum wells KI Kolokolov, AM Savin, SD Beneslavski, NY Minina, OP Hansen
International Journal of High Pressure Research 18 (1-6), 69-74, 2000
3 2000 Temperature and deformation dependence of output wavelength and polarization in laser diodes based on p-AlGaAs/GaAsP/n-AlGaAs nanostructures EV Bogdanov, KI Kolokolov, NY Minina
Physics, Chemistry And Application Of Nanostructures: Reviews And Short …, 2017
2 2017 Transformation of the band structure and anisotropy phenomena in 2d hole gas at GaAs/AlGaAs heterointerface under uniaxial compression EV Bogdanov, KI Kolokolov, NY Minina
Physics, Chemistry and Applications of Nanostructures, 28-31, 2013
2 2013 Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells KI Kolokolov, CZ Ning
Novel In-Plane Semiconductor Lasers III 5365, 259-266, 2004
2 2004 Microscopic modeling of intersubband optical processes in type ii semiconductor quantum wells: Linear absorption J Li, KI Kolokolov, CZ Ning
Physics and Simulation of Optoelectronic Devices XI 4986, 255-264, 2003
2 2003 
Cun-Zheng Ning (甯存政)Professor of Electronic Engineering, Tsinghua UniversityПодтвержден адрес электронной почты в домене tsinghua.edu.cn
