Angsuman Sarkar

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	1738	1254
h-индекс	24	21
i10-индекс	36	33

340

170

255

2012201320142015201620172018201920202021202220232024202520 13 35 48 94 79 73 111 120 220 330 238 321 24

Общий доступ

Просмотреть все

4 статьи

6 статей

доступно

недоступно

На основе финансирования

Соавторы

Dr Arpan DeyasiRCC Institute of Information TechnologyПодтвержден адрес электронной почты в домене rcciit.org.in
Dr. Swapnadip DeAssociate Professor of Dept of ECE at Meghnad Saha Institute of Technology:Ph.D(Engg), M.TechПодтвержден адрес электронной почты в домене msit.edu.in
Debashis DeProfessor,Maulana Abul Kalam Azad University of Technology,West BengalПодтвержден адрес электронной почты в домене makautwb.ac.in
Kalyan BiswasMCKV Institute of EngineeringПодтвержден адрес электронной почты в домене ieee.org
ARIGHNA BASAKAssistant Professor of Electronics & Communication Engineering Department, Brainware UniversityПодтвержден адрес электронной почты в домене brainwareuniversity.ac.in
Dr SUDHANSU MOHAN BISWALASSOCIATE PROF OF AEI DEPT.Silicon Institute of Technology,BhubaneswarПодтвержден адрес электронной почты в домене silicon.ac.in
BISWAJIT BARALSilicon Institute Of Technology BhubaneswarПодтвержден адрес электронной почты в домене silicon.ac.in
Manash Chanda, Ph. D (Engg.)Associate Professor and Head, Dept. of ECE, Meghnad Saha Institute of Technology, Kolkata 700150Подтвержден адрес электронной почты в домене ieee.org
CHANDAN KUMAR GHOSHAssistant Professor, School of Materials Science and Nanotechnology, Jadavpur UniversityПодтвержден адрес электронной почты в домене jadavpuruniversity.in
Nisarga ChandAssistant Professor of Electronics & Communication EngineeringПодтвержден адрес электронной почты в домене adamasuniversity.ac.in
Jaya BandyopadhyayMaulana Abul Kalam Azad University of TechnologyПодтвержден адрес электронной почты в домене wbut.ac.in
Dr. Surajit BariSagar Mahavidyalaya

Angsuman Sarkar

Professor, Electronics & Communication Engg. Department, Kalyani Govt. Engg. College

Подтвержден адрес электронной почты в домене ieee.org - Главная страница

nano scale MOSFET nano electronics VLSI


Название По числу цитат По году По названию	Процитировано Процитировано	Год
Effect of gate engineering in double-gate MOSFETs for analog/RF applications A Sarkar, AK Das, S De, CK Sarkar Microelectronics Journal 43 (11), 873-882, 2012	200	2012
Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs) A Pal, A Sarkar Engineering Science and Technology, an International Journal, 2014	114	2014
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor A Chakraborty, A Sarkar Journal of Computational Electronics 16, 556-567, 2017	82	2017
Technology Computer Aided Design: Simulation for VLSI MOSFET CK Sarkar CRC Press, 2013	56*	2013
Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model A Sarkar, S De, A Dey, CK Sarkar Journal of Computational Electronics 11, 182-195, 2012	54	2012
Study of effect of gate-length downscaling on the analog/RF performance and linearity investigation of InAs-based nanowire Tunnel FET SM Biswal, B Baral, D De, A Sarkar Superlattices and Microstructures 91, 319-330, 2016	52	2016
The influence of gate underlap on analog and RF performance of III–V heterostructure double gate MOSFET A Sarkar, R Jana Superlattices and Microstructures 73, 256-267, 2014	47	2014
Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs K Biswas, A Sarkar, CK Sarkar Microsystem Technologies 24, 2317-2324, 2018	42	2018
Nanotechnology: Synthesis to Applications S Roy, CK Ghosh, CK Sarkar CRC Press, 2017	39	2017
Spacer engineering for performance enhancement of junctionless accumulation-mode bulk FinFETs K Biswas, A Sarkar, CK Sarkar IET Circuits, Devices & Systems 11 (1), 80-88, 2017	37	2017
Impact of barrier thickness on Analog, RF and Linearity performance of nanoscale DG heterostructure MOSFET K Biswas, A Sarkar, CK Sarkar Superlattices and Microstructures 86, 95-104, 2015	37	2015
RF and analogue performance investigation of DG tunnel FET A Sarkar, CK Sarkar International Journal of Electronics Letters 1 (4), 210-217, 2013	34	2013
Low power VLSI design: fundamentals A Sarkar, S De, M Chanda, CK Sarkar Walter de Gruyter GmbH & Co KG, 2016	32	2016
Analytical subthreshold modeling of dual material gate engineered nano-scale junctionless surrounding gate MOSFET considering ECPE SM Biswal, B Baral, D De, A Sarkar Superlattices and Microstructures 82, 103-112, 2015	32	2015
An analytical model of triple‐material double‐gate metal–oxide–semiconductor field‐effect transistor to suppress short‐channel effects B Baral, AK Das, D De, A Sarkar International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016	31	2016
Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study S Bari, D De, A Sarkar Physica E: Low-dimensional Systems and Nanostructures 67, 143-151, 2015	31	2015
Study of RF performance of surrounding gate MOSFET with gate overlap and underlap A Sarkar Advances in Natural Sciences: Nanoscience and Nanotechnology 5 (3), 035006, 2014	31	2014
Simulation and comparative study on analog/RF and linearity performance of III–V semiconductor-based staggered heterojunction and InAs nanowire (nw) Tunnel FET SM Biswal, B Baral, D De, A Sarkar Microsystem Technologies 25, 1855-1861, 2019	29	2019
Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors A Chakraborty, A Sarkar Superlattices and Microstructures 80, 125-135, 2015	29	2015
Analytical computation of electrical parameters in GAAQWT and CNTFET with identical configuration using NEGF method A Deyasi, A Sarkar International Journal of Electronics 105 (12), 2144-2159, 2018	28	2018

В данный момент система не может выполнить эту операцию. Повторите попытку позднее.

Статьи 1–20

Ссылок за год

Повторяющиеся цитирования

Объединенные цитирования

СоавторыСоавторы

Подписаться

Процитировано

Соавторы