| Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography A Dehzangi, AM Abdullah, F Larki, SD Hutagalung, EB Saion, ... Nanoscale research letters 7, 1-9, 2012 | 37 | 2012 |
| Angle shifting in surface plasmon resonance: experimental and theoretical verification WM Mukhtar, PS Menon, S Shaari, MZA Malek, AM Abdullah Journal of physics: conference series 431 (1), 012028, 2013 | 34 | 2013 |
| Potential use of cellulose fibre composites in marine environment—A review MFM Yang, H Hamid, AM Abdullah Engineering Applications for New Materials and Technologies, 25-55, 2018 | 21 | 2018 |
| Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography F Larki, A Dehzangi, A Abedini, AM Abdullah, E Saion, SD Hutagalung, ... Beilstein journal of nanotechnology 3 (1), 817-823, 2012 | 21 | 2012 |
| Impact of KOH etching on nanostructure fabricated by local anodic oxidation method A Dehzangi, F Larki, BY Majlis, MG Naseri, M Navasery, AM Abdullah, ... International Journal of Electrochemical Science 8 (6), 8084-8096, 2013 | 20 | 2013 |
| Numerical investigation and comparison with experimental characterisation of side gate p-type junctionless silicon transistor in pinch-off state A Dehzangi, F Larki, SD Hutagalung, EB Saion, AM Abdullah, ... Micro & Nano Letters 7 (9), 981-985, 2012 | 15 | 2012 |
| Electronic transport properties of junctionless lateral gate silicon nanowire transistor fabricated by atomic force microscope nanolithography F Larki, SD Hutagalung, A Dehzangi, EB Saion, A Abedini, AA Makarimi, ... Microelectronics and Solid State Electronics 1 (1), 15-20, 2012 | 15 | 2012 |
| Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography A Dehzangi, F Larki, EB Saion, SD Hutagalung, M Abdullah, MN Hamidon, ... American Journal of Applied Sciences 8 (9), 872, 2011 | 11 | 2011 |
| Comparison of KOH and TMAH etching on sinw arrays fabricated via AFM lithography NN Alias, KA Yaacob, SN Yusoh, AM Abdullah Journal of Physics: Conference Series 1082 (1), 012051, 2018 | 10 | 2018 |
| Review of the control system for an unmanned underwater remotely operated vehicle AM Abdullah, NI Zakaria, KAA Jalil, N Othman, WM Dahalan, H Hamid, ... Engineering applications for new materials and technologies, 609-631, 2018 | 10 | 2018 |
| Pinch-off effect in p-type double gate and single gate junctionless silicon nanowire transistor fabricated by Atomic Force Microscopy Nanolithography F Larki, A Dehzangi, J Hassan, A Abedini, EB Saion, SD Hutagalung, ... Nano Hybrids 4, 33-45, 2013 | 10 | 2013 |
| Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope F Larki, A Dehzangi, EB Saion, A Abedini, SD Hutagalung, AM Abdullah, ... physica status solidi (a) 210 (9), 1914-1919, 2013 | 7 | 2013 |
| Fabrication of p-type Double gate and Single gate Junctionless silicon nanowire transistor by Atomic Force Microscopy Nanolithography A Dehzangi, F Larki, J Hassan, SD Hutagalung, EB Saion, MN Hamidon, ... Nano Hybrids 3, 93-113, 2013 | 7 | 2013 |
| Effect of KOH etchant concentration and initiator on the fabrication of silicon nanowire transistor patterened by AFM nanolithography AM Abdullah, SD Hutagalung, Z Lockman Journal of Industrial Technology 19 (2010), 197 - 207, 2009 | 4 | 2009 |
| Atomic force microscope base nanolithography for reproducible micro and nanofabrication A Dehzangi, F Larki, BY Majlis, Z Kazemi, MM Ariannejad, AM Abdullah, ... 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014 …, 2014 | 3 | 2014 |
| Study of carrier velocity of lateral gate p-type silicon nanowire transistor (PSNWT) F Larki, A Dehzangi, EB Saion, SD Hutagalung, AM Abdullah, ... Solidstate and Technology Letter 18 (2011), 152-158, 2010 | 3 | 2010 |
| Influence of room humidity on the formation of nanoscale silicon oxide patterned by AFM lithography AM Abdullah, SD Hutagalung, Z Lockman International Journal of Nanoscience 9 (04), 251-255, 2010 | 3 | 2010 |
| Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. AM Abdullah, SD Hutagalung, Z Lockman | 3 | 2010 |
| Study of the mobility of carriers in p-type silicon nano-wire transistor A Dehzangi, F Larki, E Saion, SD Hutagalung, A A. Makarimi Reginol Fundamental Science Congress 2011, 4, 2011 | 2 | 2011 |
| The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds) AM Abdullah, KA Yaacob, NN Alias, MAM Azmi, A Abd Manaf Journal of Science and Technology 15 (2), 1-10, 2023 | 1 | 2023 |
Sabar D. HutagalungPhysics Department, Faculty of Science, Jazan University, Jazan, Saudi ArabiaПодтвержден адрес электронной почты в домене jazanu.edu.sa