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Okhyun Nam
Okhyun Nam
TU KOREA (Tech University of Korea)
Подтвержден адрес электронной почты в домене tukorea.ac.kr
Название
Процитировано
Процитировано
Год
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8611997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
6851997
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2972000
Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates
MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1996
1421996
Growth of GaN and Al0. 2Ga0. 8N on patterened substrates via organometallic vapor phase epitaxy
OH Nam, MD Bremser, BL Ward, RJ Nemanich, RFDRF Davis
Japanese journal of applied physics 36 (5A), L532, 1997
1371997
Gallium nitride semiconductor structure including laterally offset patterned layers
RF Davis, OH Nam
US Patent 6,608,327, 2003
1352003
Characteristics of GaN‐based laser diodes for post‐DVD applications
OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ...
physica status solidi (a) 201 (12), 2717-2720, 2004
1192004
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
OH Nam, TS Zheleva, MD Bremser, RF Davis
Journal of electronic materials 27 (4), 233-237, 1998
1181998
Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
HY Ryu, KH Ha, JH Chae, OH Nam, YJ Park
Applied physics letters 87 (9), 2005
1112005
Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate
JS Kwak, KY Lee, JY Han, J Cho, S Chae, OH Nam, Y Park
Applied Physics Letters 79 (20), 3254-3256, 2001
1082001
High-power GaN-based blue-violet laser diodes with AlGaN∕ GaN multiquantum barriers
SN Lee, SY Cho, HY Ryu, JK Son, HS Paek, T Sakong, T Jang, KK Choi, ...
Applied physics letters 88 (11), 2006
1002006
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis
Journal of Crystal Growth 222 (4), 706-718, 2001
1002001
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ...
Journal of applied physics 84 (9), 5238-5242, 1998
841998
Optical characterization of lateral epitaxial overgrown GaN layers
JA Freitas Jr, OH Nam, RF Davis, GV Saparin, SK Obyden
Applied physics letters 72 (23), 2990-2992, 1998
831998
Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
Applied physics letters 83 (24), 4990-4992, 2003
782003
Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to
JS Kwak, OH Nam, Y Park
Applied physics letters 80 (19), 3554-3556, 2002
782002
Three-dimensional ZnO hybrid nanostructures for oxygen sensing application
MC Jeong, BY Oh, OH Nam, T Kim, JM Myoung
Nanotechnology 17 (2), 526, 2005
762005
Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to
JS Kwak, OH Nam, Y Park
Journal of applied physics 95 (10), 5917-5919, 2004
752004
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,602,763, 2003
742003
Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes
JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong
IEEE Photonics Technology Letters 16 (6), 1450-1452, 2004
692004
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