Общедоступные статьи - A F M Anhar Uddin BhuiyanПодробнее...
2 статьи недоступны нигде
Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN
K Zhang, C Hu, AFMAU Bhuiyan, M Zhu, VGT Vangipuram, MR Karim, ...
Crystal Growth & Design 22 (8), 5004-5011, 2022
Финансирование: US National Science Foundation, US Department of Energy
MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate
AFMAU Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
2022 Compound Semiconductor Week (CSW), 1-2, 2022
Финансирование: US National Science Foundation, US Department of Defense
Закрытых работ: 3
Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
S Saha, L Meng, Z Feng, AFM Anhar Uddin Bhuiyan, H Zhao, U Singisetti
Applied Physics Letters 120 (12), 2022
Финансирование: US National Science Foundation, US Department of Defense
Авторы: S Saha
Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies
H Ghadi, JF McGlone, Z Feng, AFMAU Bhuiyan, Y Zhang, H Zhao, ...
Oxide-based Materials and Devices XII 11687, 31-37, 2021
Финансирование: US National Science Foundation, US Department of Energy, US Department of …
Авторы: H Ghadi
Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces
J Shi, A Krishnan, AFMAU Bhuiyan, YR Koh, K Huynh, A Mauze, S Mu, ...
International Electronic Packaging Technical Conference and Exhibition 85505 …, 2021
Финансирование: US Department of Defense
Авторы: J Shi
43 статьи доступны в некоторых источниках
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 2019
Финансирование: US National Science Foundation, US Department of Defense
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ...
Applied Physics Letters 115 (12), 2019
Финансирование: US National Science Foundation, US Department of Defense
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
Финансирование: US National Science Foundation, US Department of Defense
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
Финансирование: US National Science Foundation, US Department of Defense
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ...
Crystal Growth & Design 20 (10), 6722-6730, 2020
Финансирование: US National Science Foundation, US Department of Defense
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
L Meng, Z Feng, AFMAU Bhuiyan, H Zhao
Crystal Growth & Design 22 (6), 3896-3904, 2022
Финансирование: US National Science Foundation, US Department of Defense
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
Финансирование: US National Science Foundation, US Department of Defense
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
Финансирование: US Department of Defense
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (25), 2020
Финансирование: US National Science Foundation, US Department of Defense
Mg acceptor doping in MOCVD (010) β-Ga2O3
Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao
Applied Physics Letters 117 (22), 222106, 2020
Финансирование: US National Science Foundation, US Department of Defense
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ...
APL Materials 9 (5), 2021
Финансирование: US National Science Foundation, US Department of Energy, US Department of …
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates
AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao
Applied Physics Letters 117 (14), 2020
Финансирование: US National Science Foundation, US Department of Defense
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates
AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
APL Materials 9 (10), 2021
Финансирование: US National Science Foundation, US Department of Defense
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ...
IEEE Electron Device Letters 43 (12), 2029-2032, 2022
Финансирование: US National Science Foundation, US Department of Defense, US National …
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ...
Applied Physics Letters 121 (5), 2022
Финансирование: US National Science Foundation
Информация о публикациях и финансировании собрана автоматически.