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Mahesh Neupane
Mahesh Neupane
Research Scientist, US Army Research Laboratory
Подтвержден адрес электронной почты в домене mail.mil
Название
Процитировано
Процитировано
Год
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ...
ACS nano 8 (10), 10743-10755, 2014
5682014
Structure, properties and applications of two‐dimensional hexagonal boron nitride
S Roy, X Zhang, AB Puthirath, A Meiyazhagan, S Bhattacharyya, ...
Advanced Materials 33 (44), 2101589, 2021
4912021
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
YK Luo, J Xu, T Zhu, G Wu, EJ McCormick, W Zhan, MR Neupane, ...
Nano letters 17 (6), 3877-3883, 2017
2642017
Direct Bandgap Transition in Many‐Layer MoS2 by Plasma‐Induced Layer Decoupling
R Dhall, MR Neupane, D Wickramaratne, M Mecklenburg, Z Li, C Moore, ...
Advanced Materials 27 (9), 1573-1578, 2015
1182015
Exciton condensate in bilayer transition metal dichalcogenides: Strong coupling regime
B Debnath, Y Barlas, D Wickramaratne, MR Neupane, RK Lake
Physical Review B 96 (17), 174504, 2017
692017
MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials
T Pham, P Ramnani, CC Villarreal, J Lopez, P Das, I Lee, MR Neupane, ...
Carbon 142, 504-512, 2019
662019
Raman spectra of twisted CVD bilayer graphene
P Ramnani, MR Neupane, S Ge, AA Balandin, RK Lake, A Mulchandani
Carbon 123, 302-306, 2017
662017
Stacking order dependent mechanical properties of graphene/MoS2 bilayer and trilayer heterostructures
RM Elder, MR Neupane, TL Chantawansri
Applied Physics Letters 107 (7), 2015
592015
Commensurate lattice constant dependent thermal conductivity of misoriented bilayer graphene
C Li, B Debnath, X Tan, S Su, K Xu, S Ge, MR Neupane, RK Lake
Carbon 138, 451-457, 2018
492018
Systematic comparison of various oxidation treatments on diamond surface
C Li, X Zhang, EF Oliveira, AB Puthirath, MR Neupane, JD Weil, ...
Carbon 182, 725-734, 2021
412021
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
392017
Anisotropic attosecond charge carrier dynamics and layer decoupling in quasi-2D layered SnS2
CN Eads, D Bandak, MR Neupane, D Nordlund, OLA Monti
Nature Communications 8 (1), 1369, 2017
372017
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length
KG Crawford, JD Weil, PB Shah, DA Ruzmetov, MR Neupane, K Kingkeo, ...
IEEE Transactions on Electron Devices 67 (6), 2270-2275, 2020
352020
The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite
KM Habib, SS Sylvia, S Ge, M Neupane, RK Lake
Applied Physics Letters 103 (24), 2013
352013
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces
T Feng, H Zhou, Z Cheng, LS Larkin, MR Neupane
ACS applied materials & interfaces 15 (25), 29655-29673, 2023
322023
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
H Chi, Y Ou, TB Eldred, W Gao, S Kwon, J Murray, M Dreyer, RE Butera, ...
Nature Communications 14 (1), 3222, 2023
322023
Synthesis of Atomically Thin MoS2 Triangles and Hexagrams and their Electrical Transport Properties
R Ionescu, W Wang, Y Chai, Z Mutlu, I Ruiz, Z Favors, D Wickramaratne, ...
IEEE Transactions on Nanotechnology, 1-1, 2014
292014
Structural, electronic, and magnetic properties of
Y Liu, S Kwon, GJ de Coster, RK Lake, MR Neupane
Physical Review Materials 6 (8), 084004, 2022
282022
Structural and electronic properties of 2D (graphene, hBN)/H-terminated diamond (100) heterostructures
PS Mirabedini, B Debnath, MR Neupane, P Alex Greaney, ...
Applied Physics Letters 117 (12), 2020
282020
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN
D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ...
2D Materials 5 (4), 045016, 2018
222018
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Статьи 1–20