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Enlong Liu
Enlong Liu
Hikstor Technology Co. LTD
Подтвержден адрес электронной почты в домене hikstor.com
Название
Процитировано
Процитировано
Год
Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator
Y Wang, D Zhu, Y Yang, K Lee, R Mishra, G Go, SH Oh, DH Kim, K Cai, ...
Science 366 (6469), 1125-1128, 2019
2062019
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
2018 IEEE symposium on VLSI Circuits, 81-82, 2018
1802018
Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping
S Couet, T Devolder, J Swerts, S Mertens, T Lin, E Liu, S Van Elshocht, ...
Applied Physics Letters 111 (15), 2017
472017
Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
J Swerts, E Liu, S Couet, S Mertens, S Rao, W Kim, K Garello, L Souriau, ...
2017 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2017
332017
[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications
E Liu, J Swerts, S Couet, S Mertens, Y Tomczak, T Lin, V Spampinato, ...
Applied Physics Letters 108 (13), 2016
322016
Seed layer impact on structural and magnetic properties of [Co/Ni] multilayers with perpendicular magnetic anisotropy
E Liu, J Swerts, T Devolder, S Couet, S Mertens, T Lin, V Spampinato, ...
Journal of Applied Physics 121 (4), 2017
312017
2018 ieee symposium on vlsi circuits
K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
IEEE, 2018
302018
Synthetic-ferromagnet pinning layers enabling top-pinned magnetic tunnel junctions for high-density embedded magnetic random-access memory
E Liu, YC Wu, S Couet, S Mertens, S Rao, W Kim, K Garello, D Crotti, ...
Physical Review Applied 10 (5), 054054, 2018
272018
Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance
Y Tomczak, J Swerts, S Mertens, T Lin, S Couet, E Liu, K Sankaran, ...
Applied Physics Letters 108 (4), 2016
232016
Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system
T Devolder, S Couet, J Swerts, E Liu, T Lin, S Mertens, A Furnemont, ...
Journal of Applied Physics 121 (11), 2017
182017
Materials and designs of magnetic tunnel junctions with perpendicular magnetic anisotropy for high-density memory applications
E Liu
172018
Oxygen scavenging by Ta spacers in double-MgO free layers for perpendicular spin-transfer torque magnetic random-access memory
S Couet, J Swerts, S Mertens, T Lin, Y Tomczak, E Liu, B Douhard, ...
IEEE Magnetics Letters 7, 1-4, 2016
172016
Ferromagnetic resonance study of composite Co/Ni-FeCoB free layers with perpendicular anisotropy
T Devolder, E Liu, J Swerts, S Couet, T Lin, S Mertens, A Furnemont, ...
Applied Physics Letters 109 (14), 142408, 2016
152016
Top-Pinned STT-MRAM Devices With High Thermal Stability Hybrid Free Layers for High-Density Memory Applications
E Liu, J Swerts, YC Wu, A Vaysset, S Couet, S Mertens, S Rao, W Kim, ...
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
142018
Control of interlayer exchange coupling and its impact on spin–torque switching of hybrid free layers with perpendicular magnetic anisotropy
E Liu, A Vaysset, J Swerts, T Devolder, S Couet, S Mertens, T Lin, ...
IEEE Transactions on Magnetics 53 (11), 1-5, 2017
142017
Composition dependence of spin–orbit torques in PtRh/ferromagnet heterostructures
G Shi, E Liu, Q Yang, Y Liu, K Cai, H Yang
APL Materials 9 (4), 2021
92021
Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications
J Swerts, S Couet, E Liu, S Mertens, T Lin, S Rao, W Kim, S Van Elshocht, ...
2017 IEEE International Magnetics Conference (INTERMAG), 1-1, 2017
92017
Influence of the reference layer composition on the back-end-of-line compatibility of Co/Ni-based perpendicular magnetic tunnel junction stacks
Y Tomczak, T Lin, J Swerts, S Couet, S Mertens, E Liu, W KIM, ...
IEEE Transactions on Magnetics 52 (7), 3400604, 2016
92016
Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device
M Zhao, A Chen, PY Huang, C Liu, L Shen, J Liu, L Zhao, B Fang, ...
npj Quantum Materials 9 (1), 50, 2024
72024
IEEE Symposium on VLSI Circuit
K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
IEEE, New York, 2018
72018
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