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Stefan Tappertzhofen
Stefan Tappertzhofen
Professor in Micro- and Nanoelectronics, TU Dortmund University
Подтвержден адрес электронной почты в домене tu-dortmund.de - Главная страница
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Процитировано
Год
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5 (1), 4232, 2014
6972014
Nanobatteries in redox-based resistive switches require extension of memristor theory
I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ...
Nature communications 4 (1), 1771, 2013
5972013
Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
E Linn, R Rosezin, S Tappertzhofen, U Böttger, R Waser
Nanotechnology 23 (30), 305205, 2012
4172012
Generic relevance of counter charges for cation-based nanoscale resistive switching memories
S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono
ACS nano 7 (7), 6396-6402, 2013
2612013
Switching kinetics of electrochemical metallization memory cells
S Menzel, S Tappertzhofen, R Waser, I Valov
Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013
2262013
Quantum conductance and switching kinetics of AgI-based microcrossbar cells
S Tappertzhofen, I Valov, R Waser
Nanotechnology 23 (14), 145703, 2012
1742012
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
T Tsuruoka, I Valov, S Tappertzhofen, J Van Den Hurk, T Hasegawa, ...
Advanced functional materials 25 (40), 6374-6381, 2015
1712015
Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
S Tappertzhofen, H Mündelein, I Valov, R Waser
Nanoscale 4 (10), 3040-3043, 2012
1382012
Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
S Cho, C Yun, S Tappertzhofen, A Kursumovic, S Lee, P Lu, Q Jia, M Fan, ...
Nature communications 7 (1), 12373, 2016
1212016
Redox processes in silicon dioxide thin films using copper microelectrodes
S Tappertzhofen, S Menzel, I Valov, R Waser
Applied physics letters 99 (20), 2011
972011
Impact of the counter‐electrode material on redox processes in resistive switching memories
S Tappertzhofen, R Waser, I Valov
ChemElectroChem 1 (8), 1287-1292, 2014
892014
Electrochemical‐Memristor‐Based Artificial Neurons and Synapses—Fundamentals, Applications, and Challenges
S Chen, T Zhang, S Tappertzhofen, Y Yang, I Valov
Advanced Materials 35 (37), 2301924, 2023
822023
Quantum conductance in memristive devices: fundamentals, developments, and applications
G Milano, M Aono, L Boarino, U Celano, T Hasegawa, M Kozicki, ...
Advanced Materials 34 (32), 2201248, 2022
692022
Nanoscale Plasmon‐Enhanced Spectroscopy in Memristive Switches
G Di Martino, S Tappertzhofen, S Hofmann, J Baumberg
small 12 (10), 1334-1341, 2016
682016
Nanobattery effect in RRAMs—implications on device stability and endurance
S Tappertzhofen, E Linn, U Böttger, R Waser, I Valov
IEEE electron device letters 35 (2), 208-210, 2013
682013
Bond nature of active metal ions in SiO 2-based electrochemical metallization memory cells
DY Cho, S Tappertzhofen, R Waser, I Valov
Nanoscale 5 (5), 1781-1784, 2013
612013
SiO2 based conductive bridging random access memory
W Chen, S Tappertzhofen, HJ Barnaby, MN Kozicki
Journal of Electroceramics 39, 109-131, 2017
592017
Capacity based nondestructive readout for complementary resistive switches
S Tappertzhofen, E Linn, L Nielen, R Rosezin, F Lentz, R Bruchhaus, ...
Nanotechnology 22 (39), 395203, 2011
582011
Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory.
DY Cho, I Valov, J van den Hurk, S Tappertzhofen, R Waser
Advanced Materials (Deerfield Beach, Fla.) 24 (33), 4552-4556, 2012
532012
An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
O Kavehei, E Linn, L Nielen, S Tappertzhofen, E Skafidas, I Valov, ...
Nanoscale 5 (11), 5119-5128, 2013
502013
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