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Tibor Grasser
Tibor Grasser
Professor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE
Подтвержден адрес электронной почты в домене iue.tuwien.ac.at - Главная страница
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Год
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
6532021
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
T Grasser
Microelectronics Reliability 52 (1), 39-70, 2012
6012012
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
5422011
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 3385, 2020
4282020
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3842010
A review of hydrodynamic and energy-transport models for semiconductor device simulation
T Grasser, TW Tang, H Kosina, S Selberherr
Proceedings of the IEEE 91 (2), 251-274, 2003
3762003
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer
2010 IEEE international reliability physics symposium, 16-25, 2010
3582010
Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
3112008
A two-stage model for negative bias temperature instability
T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel
2009 IEEE international reliability physics symposium, 33-44, 2009
3002009
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
2902021
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress
H Reisinger, T Grasser, W Gustin, C Schlünder
2010 IEEE International Reliability Physics Symposium, 7-15, 2010
2702010
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
2532019
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
2412016
Analytic modeling of the bias temperature instability using capture/emission time maps
T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ...
2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011
2202011
The universality of NBTI relaxation and its implications for modeling and characterization
T Grasser, W Gos, V Sverdlov, B Kaczer
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
2082007
Long-term stability and reliability of black phosphorus field-effect transistors
YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ...
ACS nano 10 (10), 9543-9549, 2016
1962016
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1922018
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability
K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger
IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019
1842019
Bias temperature instability for devices and circuits
T Grasser
Springer Science & Business Media, 2013
1842013
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
T Grasser, H Reisinger, PJ Wagner, B Kaczer
Physical Review B—Condensed Matter and Materials Physics 82 (24), 245318, 2010
1812010
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