Dr. BRINDA BHOWMICK

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	2537	2315
h-индекс	26	26
i10-индекс	79	72

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Srimanta BaishyaNIT SilcharПодтвержден адрес электронной почты в домене nits.ac.in
Rupam GoswamiAssistant Professor, Department of Electronics and Communication Engineering, Tezpur UniversityПодтвержден адрес электронной почты в домене tezu.ernet.in
Puspa Devi PukhrambamNATIONAL INSTITUTE OF TECHNOLOGY SILCHARПодтвержден адрес электронной почты в домене ece.nits.ac.in
Wangkheirakpam Vandana DeviAssistant Professor, National Institute of Technology ManipurПодтвержден адрес электронной почты в домене mnnit.ac.in
K VANLALAWMPUIANational Institute of Technology MizoramПодтвержден адрес электронной почты в домене nitmz.ac.in
Puja GhoshAssistant Professor, IIIT RanchiПодтвержден адрес электронной почты в домене iiitranchi.ac.in
Prashanth KumarPhD National Institute of Technology, SilcharПодтвержден адрес электронной почты в домене student.nits.ac.in
Suman Kr MitraAssistant Professor, Department of Electronics Engineering, Harcourt ButlerTechnical UniversityПодтвержден адрес электронной почты в домене student.nits.ac.in
Dr. Basab DasAssistant Professor, Girijananda Chowdhury UniversityПодтвержден адрес электронной почты в домене gcuniversity.ac.in
PARTHA PRATIM GOSWAMIPostdoctoral Research Associate, Washington University in St. LouisПодтвержден адрес электронной почты в домене wustl.edu
Dhruvajyoti BarahPhD Scholar, AMOLED Research Center, Indian Institute of Technology MadrasПодтвержден адрес электронной почты в домене smail.iitm.ac.in
Dipjyoti BisharadPrincipal Software Engineer, Motorola SolutionsПодтвержден адрес электронной почты в домене ieee.org
Debakshi DeyIIT DelhiПодтвержден адрес электронной почты в домене iitd.ac.in

Dr. BRINDA BHOWMICK

Professor, NIT Silchar

Подтвержден адрес электронной почты в домене ece.nits.ac.in - Главная страница

Semiconductor Device Sensors


Название По числу цитат По году По названию	Процитировано Процитировано	Год
Comparative analyses of circular gate TFET and heterojunction TFET for dielectric-modulated label-free biosensing R Goswami, B Bhowmick IEEE Sensors Journal 19 (21), 9600-9609, 2019	170	2019
N+ pocket doped vertical TFET based dielectric-modulated biosensor considering non-ideal hybridization issue: A simulation study VD Wangkheirakpam, B Bhowmick, PD Pukhrambam IEEE Transactions on Nanotechnology 19, 156-162, 2020	137	2020
Temperature effect on RF/analog and linearity parameters in DMG FinFET R Saha, B Bhowmick, S Baishya Applied Physics A 124, 1-10, 2018	95	2018
Investigation of a Ge-source vertical TFET with delta-doped layer K Vanlalawpuia, B Bhowmick IEEE Transactions on Electron Devices 66 (10), 4439-4445, 2019	87	2019
Review of FinFET devices and perspective on circuit design challenges RK Maurya, B Bhowmick Silicon 14 (11), 5783-5791, 2022	68	2022
N+ pocket-doped vertical TFET for enhanced sensitivity in biosensing applications: modeling and simulation WV Devi, B Bhowmick, PD Pukhrambam IEEE Transactions on Electron Devices 67 (5), 2133-2139, 2020	65	2020
Heterojunction fully depleted SOI-TFET with oxide/source overlap S Chander, B Bhowmick, S Baishya Superlattices and Microstructures 86, 43-50, 2015	57	2015
A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter SK Mitra, R Goswami, B Bhowmick Superlattices and Microstructures 92, 37-51, 2016	54	2016
Electrical noise in circular gate tunnel FET in presence of interface traps R Goswami, B Bhowmick, S Baishya Superlattices and Microstructures 86, 342-354, 2015	53	2015
Effect of scaling on noise in circular gate TFET and its application as a digital inverter R Goswami, B Bhowmick, S Baishya Microelectronics Journal 53, 16-24, 2016	51	2016
Analysis of hetero-stacked source TFET and heterostructure vertical TFET as dielectrically modulated label-free biosensors K Vanlalawmpuia, B Bhowmick IEEE Sensors Journal 22 (1), 939-947, 2021	50	2021
An analytical model of drain current in a nanoscale circular gate TFET R Goswami, B Bhowmick IEEE Transactions on Electron Devices 64 (1), 45-51, 2016	44	2016
Optimisation of pocket doped junctionless TFET and its application in digital inverter WV Devi, B Bhowmick Micro & Nano Letters 14 (1), 69-73, 2019	42	2019
TFET on Selective Buried Oxide (SELBOX) Substrate with Improved I_ON/I_OFF Ratio and Reduced Ambipolar Current D Barah, AK Singh, B Bhowmick Silicon 11 (2), 973-981, 2019	39	2019
Statistical dependence of gate metal work function on various electrical parameters for an n-channel Si step-FinFET R Saha, B Bhowmick, S Baishya IEEE Transactions on Electron Devices 64 (3), 969-976, 2017	38	2017
Dependence of RF/analog and linearity figure of merits on temperature in ferroelectric FinFET: a simulation study R Saha, R Goswami, B Bhowmick, S Baishya IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 67 …, 2020	33	2020
Noise behavior of ferro electric tunnel FET B Das, B Bhowmick Microelectronics Journal 96, 104677, 2020	33	2020
Scaling of dopant segregation Schottky barrier using metal strip buried oxide MOSFET and its comparison with conventional device P Kumar, WasimArif, B Bhowmick Silicon 10, 811-820, 2018	33	2018
3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs R Saha, S Baishya, B Bhowmick Journal of Computational Electronics 17, 153-162, 2018	32	2018
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021	30	2021

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