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Barsha Jain
Barsha Jain
Solidigm Technology, New Jersey Institute of Technology
Подтвержден адрес электронной почты в домене solidigm.com
Название
Процитировано
Процитировано
Год
The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
1482020
Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays
HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ...
Micromachines 10 (8), 492, 2019
712019
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes
B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ...
Optics Express 28 (1), 665-675, 2020
572020
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ...
Applied Optics 59 (17), 5276-5281, 2020
352020
A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm
R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021
342021
Epitaxial growth and characterization of AlInN-based core-shell nanowire light emitting diodes operating in the ultraviolet spectrum
RT Velpula, B Jain, MR Philip, HD Nguyen, R Wang, HPT Nguyen
Scientific reports 10 (1), 1-10, 2020
322020
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study
DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ...
IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020
232020
Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures
B Jain, RT Velpula, M Tumuna, HQT Bui, J Jude, TT Pham, AV Hoang, ...
Optics Express 28 (15), 22908-22918, 2020
222020
High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation
HQT Bui, RT Velpula, B Jian, MR Philip, HD Tong, TR Lenka, ...
Applied Optics 59 (24), 7352-7356, 2020
192020
Multilevel Resistive Switching in Hf-Based RRAM
B Jain, C Huang, D Misra, K Tapily, RD Clark, S Consiglio, CS Wajda, ...
ECS Transactions 89 (3), 39, 2019
192019
Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
RT Velpula, B Jain, HQT Bui, TT Pham, HD Nguyen, TR Lenka, ...
Optical Materials Express 10 (2), 472-483, 2020
182020
High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure
RT Velpula, B Jain, S Velpula, HD Nguyen, HPT Nguyen
Optics Letters 45 (18), 5125-5128, 2020
172020
Enhanced Hole Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using Double-Sided Step Graded Superlattice Electron Blocking Layer
B Jain, RT Velpula, S Velpula, HD Nguyen, H Nguyen
Journal of the Optical Society of America B 37 (8), 2020
152020
Improved performance of electron blocking layer free algan deep ultraviolet light-emitting diodes using graded staircase barriers
B Jain, RT Velpula, M Patel, SM Sadaf, HPT Nguyen
Micromachines 12 (3), 334, 2021
112021
Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices
RT Velpula, B Jain, HPT Nguyen
Nanotechnology 34 (7), 075201, 2022
102022
Full-Color III-Nitride Nanowire Light-Emitting Diodes
RT Velpula, B Jain, HQT Bui, HPT Nguyen
Journal of Advanced Engineering and Computation 3 (4), 551-588, 2019
92019
Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology
S Das, TR Lenka, FA Talukdar, RT Velpula, B Jain, HPT Nguyen, G Crupi
Engineering Research Express 4 (1), 015030, 2022
82022
Improving Color Quality of Nanowire White Light-Emitting Diodes with Mn4+ Doped Fluoride Nanosheets
THQ Vu, TT Doan, B Jain, RT Velpula, TCT Pham, HPT Nguyen, ...
Micromachines 12 (8), 965, 2021
82021
Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded pAlGaN Hole Injection Layer
HQT Bui, HA Dang, TT Doan, RT Velpula, B Jain, HPT Nguyen, ...
physica status solidi (a) 218 (15), 2100003, 2021
82021
Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT
R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Journal of Semiconductors 41, -1--4, 2020
82020
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