IEEE Int. Electron Devices Meet B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Tech. Dig 729, 2011
1028 * 2011 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
928 2011 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
922 2011 Endurance/Retention Trade-off on YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
296 2013 Two-dimensional materials prospects for non-volatile spintronic memories H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny, B Dlubak, A Fert, ...
Nature 606 (7915), 663-673, 2022
282 2022 Intrinsic switching variability in HfO2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
268 2013 Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions E Grimaldi, V Krizakova, G Sala, F Yasin, S Couet, GS Kar, K Garello, ...
Nature Nanotechnology 15 (2), 111-117, 2020
247 2020 Balancing SET/RESET Pulse for YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
223 2012 SOT-MRAM 300mm integration for low power and ultrafast embedded memories K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
2018 IEEE Symposium on VLSI Circuits, 81-82, 2018
180 2018 Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
2019 Symposium on VLSI Circuits, T194-T195, 2019
173 2019 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
142 2013 Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
128 2020 Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
120 2012 International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
IEEE, Washington, DC, 402, 2011
120 2011 Kinetic evolution and equilibrium morphology of strained islands A Rastelli, M Stoffel, J Tersoff, GS Kar, OG Schmidt
Physical review letters 95 (2), 026103, 2005
116 2005 Understanding of the endurance failure in scaled HfO2 -based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
112 2012 Ultralow sub-500nA operating current high-performance TiN\Al2 O3 \HfO2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
97 2012 Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
92 2012 Voltage-gate assisted spin-orbit torque magnetic random access memory for high-density and low-power embedded application YC Wu, K Garello, W Kim, M Gupta, M Perumkunnil, V Kateel, S Couet, ...
arXiv preprint arXiv:2104.09599, 2021
81 2021 Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ...
Applied physics letters 84 (8), 1386-1388, 2004
79 2004 
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