| The dawn of Ga2O3 HEMTs for high power electronics-A review R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen Materials Science in Semiconductor Processing 119, 105216, 2020 | 148 | 2020 |
| A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 34 | 2021 |
| Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ... IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020 | 23 | 2020 |
| Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications GP Rao, TR Lenka, R Singh, HPT Nguyen Journal of the Korean Physical Society 81 (9), 876-884, 2022 | 21 | 2022 |
| Operation Principle of AlGaN/GaN HEMT GP Rao, R Singh, TR Lenka HEMT Technology and Applications, 105-114, 2022 | 18 | 2022 |
| Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications G Purnachandra Rao, R Singh, TR Lenka HEMT Technology and Applications, 139-153, 2022 | 17 | 2022 |
| Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications GP Rao, R Singh, TR Lenka, NEI Boukortt, HPT Nguyen International Journal of RF and Microwave Computer‐Aided Engineering 32 (12 …, 2022 | 14 | 2022 |
| Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics R Singh, TR Lenka, HPT Nguyen Journal of Electronic Materials 49, 5266-5271, 2020 | 13 | 2020 |
| Comparative study of III-Nitride Nano-HEMTs on different substrates for emerging high-power nanoelectronics and millimetre wave applications G Purnachandra Rao, TR Lenka, R Singh, NEI Boukortt, SM Sadaf, ... Journal of Electronic Materials 52 (3), 1948-1957, 2023 | 11 | 2023 |
| The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT GP Rao, N Baruah, TR Lenka, R Singh, B Nour El I, HPT Nguyen 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | 11 | 2022 |
| Measure of persistency and its relationship with peak yield and lactation milk yield. S Prasad, R Singh Indian Journal of Dariy Science (India)., 1999 | 11 | 1999 |
| Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT R Singh, TR Lenka, DK Panda, HPT Nguyen, NEI Boukortt, G Crupi Materials Science in Semiconductor Processing 145, 106627, 2022 | 10 | 2022 |
| Investigation of E-mode beta-gallium oxide MOSFET for emerging nanoelectronics R Singh, TR Lenka, RT Velpula, BHQ Thang, HPT Nguyen 2019 IEEE 14th nanotechnology materials and devices conference (NMDC), 1-5, 2019 | 10 | 2019 |
| Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications R Singh, GP Rao, TR Lenka, SVS Prasad, NEI Boukortt, G Crupi, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2024 | 9 | 2024 |
| Analytical modeling of dielectric modulated negative capacitance MoS2 field effect transistor for next‐generation label‐free biosensor DK Panda, TR Lenka, R Singh, V Goyal, NEI Boukortt, HPT Nguyen International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023 | 8 | 2023 |
| Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications GP Rao, N Baruah, TR Lenka, R Singh, SM Sadaf, HPT Nguyen 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | 8 | 2022 |
| Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen Journal of Semiconductors 41 (10), 102802, 2020 | 8 | 2020 |
| Smart Trolley Using Automated Billing Interface R Singh, KN Rao, R Naik, K Anjali, P Vineeth 2022 International Conference on Advancements in Smart, Secure and …, 2022 | 6 | 2022 |
| Comparative power analysis of CMOS & adiabatic logic gates H Sharma, R Singh 2015 International Conference on Green Computing and Internet of Things …, 2015 | 6 | 2015 |
| Investigation of β-Ga2O3-based HEMTs using 2D Simulations for low noise amplification and RF applications R Singh, TR Lenka, DK Panda, HPT Nguyen Engineering Research Express 3 (3), 035042, 2021 | 5 | 2021 |
Trupti Ranjan LenkaNational Institute of Technology Silchar, Assam, INDIAПодтвержден адрес электронной почты в домене ieee.org