| Breast cancer, screening and diagnostic tools: All you need to know D Barba, A León-Sosa, P Lugo, D Suquillo, F Torres, F Surre, L Trojman, ... Critical reviews in oncology/hematology 157, 103174, 2021 | 129 | 2021 |
| Introducing 5-nm FinFET technology in Microwind E Sicard, L Trojman | 81 | 2021 |
| Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ... Journal of Applied Physics 114 (7), 2013 | 69 | 2013 |
| Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination E Acurio, F Crupi, N Ronchi, B De Jaeger, B Bakeroot, S Decoutere, ... IEEE Transactions on Electron Devices 65 (5), 1765-1770, 2018 | 41 | 2018 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 41 | 2015 |
| On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT E Acurio, F Crupi, P Magnone, L Trojman, G Meneghesso, F Iucolano Solid-State Electronics 132, 49-56, 2017 | 40 | 2017 |
| RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices E San Andres, L Pantisano, J Ramos, S Severi, L Trojman, S De Gendt, ... IEEE electron device letters 27 (9), 772-774, 2006 | 32 | 2006 |
| Electrical characteristics of 8-/spl Aring/EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions LA Ragnarsson, S Severi, L Trojman, KD Johnson, DP Brunco, ... IEEE transactions on electron devices 53 (7), 1657-1668, 2006 | 32* | 2006 |
| Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework E Garzon, R De Rose, F Crupi, L Trojman, G Finocchio, M Carpentieri, ... Integration 71, 56-69, 2020 | 29 | 2020 |
| Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework E Garzon, R De Rose, F Crupi, L Trojman, M Lanuzza Microelectronic Engineering 215, 111009, 2019 | 29 | 2019 |
| Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs LM Procel, F Crupi, J Franco, L Trojman, B Kaczer IEEE Electron Device Letters 35 (12), 1167-1169, 2014 | 26 | 2014 |
| Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs E Acurio, F Crupi, P Magnone, L Trojman, F Iucolano Microelectronic Engineering 178, 42-47, 2017 | 25 | 2017 |
| High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions LA Ragnarsson, S Severi, L Trojmanm, DP Brunco, KD Johnson, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 234-235, 2005 | 22 | 2005 |
| Reconfigurable CMOS/STT-MTJ non-volatile circuit for logic-in-memory applications E Garzón, B Zambrano, T Moposita, R Taco, LM Prócel, L Trojman 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020 | 21 | 2020 |
| On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics LÅ Ragnarsson, J Mitard, T Kauerauf, A De Keersgieter, T Schram, ... Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011 | 20 | 2011 |
| Mobility and dielectric quality of 1-nm EOT HfSiON on Si (110) and (100) L Trojman, L Pantisano, I Ferain, S Severi, HE Maes, G Groeseneken IEEE transactions on electron devices 55 (12), 3414-3420, 2008 | 20 | 2008 |
| A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks M Vatalaro, T Moposita, S Strangio, L Trojman, A Vladimirescu, ... Electronics 10 (9), 1004, 2021 | 17 | 2021 |
| Reliability assessment of AlGaN/GaN Schottky barrier diodes under ON-state stress E Acurio, L Trojman, F Crupi, T Moposita, B De Jaeger, S Decoutere IEEE Transactions on Device and Materials Reliability 20 (1), 167-171, 2020 | 17 | 2020 |
| DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory V Maccaronio, F Crupi, LM Procel, L Goux, E Simoen, L Trojman, ... Microelectronic engineering 107, 1-5, 2013 | 17 | 2013 |
| Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement A Shickova, N Collaert, P Zimmerman, M Demand, E Simoen, G Pourtois, ... 2007 IEEE Symposium on VLSI Technology, 112-113, 2007 | 17 | 2007 |
Luis Miguel Prócel MoyaUniversidad San Francisco de QuitoПодтвержден адрес электронной почты в домене usfq.edu.ec
