Design of sub-1g microelectromechanical systems accelerometers D Yamane, T Konishi, T Matsushima, K Machida, H Toshiyoshi, K Masu
Applied Physics Letters 104 (7), 2014
105 2014 New binary sequences with zero-correlation duration for approximately synchronised CDMA JS Cha, S Kameda, M Yokoyama, H Nakase, K Masu, K Tsubouchi
Electronics Letters 36 (11), 1, 2000
105 2000 Complete planarization of via holes with aluminum by selective and nonselective chemical vapor deposition K Tsubouchi, K Masu, N Shigeeda, T Matano, Y Hiura, N Mikoshiba
Applied physics letters 57 (12), 1221-1223, 1990
92 1990 A bidirectional-and multi-drop-transmission-line interconnect for multipoint-to-multipoint on-chip communications H Ito, M Kimura, K Miyashita, T Ishii, K Okada, K Masu
IEEE Journal of Solid-State Circuits 43 (4), 1020-1029, 2008
83 2008 Selective aluminum chemical vapor deposition K Tsubouchi, K Masu
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10 (4 …, 1992
79 1992 Process for thin film formation K Tsubouchi, K Masu
US Patent 5,604,153, 1997
71 1997 Acceptor energy level for Zn in Ga1− xAlxAs K Masu, M Konagai, K Takahashi
Journal of Applied Physics 51 (2), 1060-1064, 1980
56 1980 Process for forming deposited film N Mikoshiba, T Ohmi, K Tsubouchi, K Masu, N Suzuki
US Patent 5,753,320, 1998
54 1998 Pyrolysis and photolysis of trimethylaluminum N Suzuki, C Anayama, K Masu, K Tsubouchi, N Mikoshiba
Japanese journal of applied physics 25 (8R), 1236, 1986
53 1986 13.8 A 5.8 GHz RF-powered transceiver with a 113μW 32-QAM transmitter employing the IF-based quadrature backscattering technique A Shirane, H Tan, Y Fang, T Ibe, H Ito, N Ishihara, K Masu
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
52 2015 On-chip variable inductor using microelectromechanical systems technology Y Yokoyama, T Fukushige, S Hata, K Masu, A Shimokohbe
Japanese Journal of Applied Physics 42 (4S), 2190, 2003
52 2003 Transmission electron microscopic observation of AlN/α-Al2O3 heteroepitaxial interface with initial-nitriding AlN layer K Masu, Y Nakamura, T Yamazaki, T Shibata, M Takahashi, ...
Japanese journal of applied physics 34 (6B), L760, 1995
51 1995 Modeling of spiral inductors K Okada, K Masu
Advanced Microwave Circuits and Systems 4, 291-312, 2010
50 2010 On-Chip High- K Okada, H Sugawara, H Ito, K Itoi, M Sato, H Abe, T Ito, K Masu
IEEE Transactions on Electron Devices 53 (9), 2401-2406, 2006
50 2006 RF-powered transceiver with an energy-and spectral-efficient IF-based quadrature backscattering transmitter A Shirane, Y Fang, H Tan, T Ibe, H Ito, N Ishihara, K Masu
IEEE Journal of Solid-State Circuits 50 (12), 2975-2987, 2015
49 2015 On-chip transmission line for long global interconnects H Ito, J Inoue, S Gomi, H Sugita, K Okada, K Masu
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
49 2004 Pulse electroplating of ultra-fine grained Au films with high compressive strength CY Chen, M Yoshiba, T Nagoshi, TFM Chang, D Yamane, K Machida, ...
Electrochemistry Communications 67, 51-54, 2016
45 2016 Apparatus for vaporizing liquid raw material and apparatus for forming thin film K Tsubouchi, K Masu
US Patent 5,421,895, 1995
45 1995 Area-selective CVD of metals K Tsubouchi, K Masu
Thin Solid Films 228 (1-2), 312-318, 1993
43 1993 Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride N Mikoshiba, K Tsubouchi, K Masu
US Patent 5,180,687, 1993
43 1993 
Kenichi OkadaInstitute of Science Tokyo (formerly Tokyo Institute of Technology)Подтвержден адрес электронной почты в домене ee.e.titech.ac.jp
